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首页> 外文会议>International Symposium on Rapid Thermal and Other Short-Time Processing Technologies II, Mar 24-29, 2001, Washington DC >MULTIPLE SPIKE RTP PROCESS FOR FORMING ULTRA-THIN OXIDES FOR MOS GATE DIELECTRIC APPLICATIONS
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MULTIPLE SPIKE RTP PROCESS FOR FORMING ULTRA-THIN OXIDES FOR MOS GATE DIELECTRIC APPLICATIONS

机译：用于MOS栅极电应用的超薄氧化物形成的多重钉RTP过程

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摘要

Ultra-thin gate oxides grown using spike type rapid thermal processing were evaluated and compared with the conventional RTO grown oxide. These spike type RTP processes capitalizes on the fast ramp and rapid process gas switching capabilities of the new generation RTP tools for growing and nitriding of ultra thin oxide films that are highly suitable for ULSI gate application. In a spike process superior quality oxide films were grown at significantly increased peak process temperature while significant film thickness reduction was possible. We have demonstrated the application of up to three temperature spikes in a single RTP procedure. Both the two-step and three-step temperature spike oxide growth processes presented in this paper using different ambient of O_2 and N_2O showed significantly improved oxide integrity over the films grown in conventional high temperature RTO process.
机译：对使用尖峰型快速热处理生长的超薄栅极氧化物进行了评估，并将其与常规RTO生长的氧化物进行了比较。这些尖峰型RTP工艺利用了新一代RTP工具的快速升温和快速工艺气体切换功能，该工艺可用于非常适合ULSI栅极应用的超薄氧化膜的生长和氮化。在尖峰工艺中，高质量的氧化膜可以在峰值工艺温度显着提高的同时生长，同时可以显着降低膜厚。我们已经证明了在单个RTP程序中最多可应用三个温度峰值。本文介绍的使用不同环境O_2和N_2O的两步和三步温度峰值氧化物生长工艺均显示出比常规高温RTO工艺中生长的膜明显改善的氧化物完整性。

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