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首页> 外文会议>International symposium on Repid Thermal and Other Short-Time Processing Technologies >MULTIPLE SPIKE RTP PROCESS FOR FORMING ULTRA-THIN OXIDES FOR MOS GATE DIELECTRIC APPLICATIONS
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MULTIPLE SPIKE RTP PROCESS FOR FORMING ULTRA-THIN OXIDES FOR MOS GATE DIELECTRIC APPLICATIONS

机译：用于形成MOS栅极电介质应用的超薄氧化物的多个尖峰RTP工艺

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Ultra-thin gate oxides grown using spike type rapid thermal processing were evaluated and compared with the conventional RTO grown oxide. These spike type RTP processes capitalizes on the fast ramp and rapid process gas switching capabilities of the new generation RTP tools for growing and nitriding of ultra thin oxide films that are highly suitable for ULSI gate application. In a spike process superior quality oxide films were grown at significantly increased peak process temperature while significant film thickness reduction was possible. We have demonstrated the application of up to three temperature spikes in a single RTP procedure. Both the two-step and three-step temperature spike oxide growth processes presented in this paper using different ambient of O_2 and N_2O showed significantly improved oxide integrity over the films grown in conventional high temperature RTO process.
机译：使用穗型快速热处理生长的超薄栅极氧化物并与常规RTO生长的氧化物进行比较。这些尖峰型RTP流程大写了新一代RTP工具的快速斜坡和快速处理气体切换能力，以便高度适用于ULSI栅极应用的超薄氧化膜的生长和氮化。在尖峰过程中，在显着增加的峰值过程温度下，卓越的氧化膜在显着增加的同时，可以进行显着的膜厚度降低。我们已经证明了在单个RTP过程中最多三个温度尖峰。本文使用O_2和N_2O的不同环境呈现的两步和三步温度偶峰氧化物生长方法显示出在常规高温RTO工艺中生长的薄膜上显着改善的氧化物完整性。

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