• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International Symposium on VLSI Design and Test >TID effects on retention of 0.13 amp;#x03BC;m SONOS memory cell: A device simulation approach
【24h】

TID effects on retention of 0.13 amp;#x03BC;m SONOS memory cell: A device simulation approach

机译：关于保留0.13＆＃x03bc; m sonos存储器单元的TID效果：设备仿真方法

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Flash memory cells used in space applications are under continuous impact of Total Ionizing Dose (TID) effects. It causes charge trapping in the oxide and in the oxide/substrate interface. In this work, we investigate the TID radiation response of 0.13μm SONOS flash memory cell with different charge states upto 1 Mrad(Si). It is found that threshold voltage of programmed and virgin states of memory decreases with irradiation due to accumulation of holes. For erased state, accumulation of induced holes and loss of holes in nitride layer tends to cancel each other, causing no significant change. Further, we also proposed a device simulation approach to test data retention at room and high temperature as a function of TID irradiations received. We observed that retention is not much dependent on irradiation dose. TID exposure degrades the device retention and this effect enhances with increase in temperature due to thermally activated electron detrapping. All the analyses are accomplished using physical simulation models of charge trapping in Sentaurus TCAD suite, comparing results with established qualitative models.
机译：空间应用中使用的闪存单元处于全电离剂量（TID）效应的连续影响。它导致电荷捕获氧化物和氧化物/衬底界面。在这项工作中，我们研究了0.13μmsonos闪存单元的TID辐射响应，具有不同的电荷状态，Upto 1 Mrad（Si）。结果发现，由于孔的累积，记录的编程和Virgin状态的阈值电压随着辐射而减小。对于擦除状态，诱导孔的累积和氮化物层中的孔的损失趋于彼此抵消，从而没有显着变化。此外，我们还提出了一种在房间和高温下测试数据保留的设备仿真方法，作为收到的TID照射。我们观察到保留并不多依赖于辐照剂量。 TID曝光使器件保持降低，并且由于热激活的电子脱网引起的温度升高，这种效果增强。所有分析都是使用Sentaurus TCAD套件的电荷捕获的物理仿真模型来完成的，比较既定定性模型的结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号