Etching defects on KOH etched silicon-implementation of silicon bench technology for low cost packaging

机译：KOH蚀刻硅上的蚀刻缺陷-用于低成本封装的硅台板技术的实现

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In this paper we report our experimental results about etching defects and microscopic surface roughness on potassium hydroxide (KOH) etched [100] silicon. We have studied the formation and morphology of etch hillock defects during the anisotropic etching. The morphology of etch hillocks depends on process condition. Our measurements and calculations reveal that the pyramidal shaped hillocks are bounded by {567} and {313} planes after period of etching in 30% wt and 45% wt KOH solutions respectively. Our experimental results indicated that hillock defect density is correlated with low etchant concentration and high etch temperature. The activation energy for defect formation is 1.2 eV, considerably higher than the energy associated with silicon removal. Examination of defects by electron microscopy suggests that a regrowth process may be involved in defect formation.

机译：在本文中，我们报告了有关在氢氧化钾（KOH）蚀刻的[100]硅上蚀刻缺陷和微观表面粗糙度的实验结果。我们研究了各向异性腐蚀过程中腐蚀丘陵缺陷的形成和形貌。蚀刻小丘的形态取决于工艺条件。我们的测量和计算表明，分别在30％wt和45％wt KOH溶液中蚀刻一段时间后，金字塔形的小丘被{567}和{313}平面界定。我们的实验结果表明，小丘缺陷密度与低蚀刻剂浓度和高蚀刻温度有关。缺陷形成的活化能为1.2 eV，大大高于与除硅相关的能量。通过电子显微镜检查缺陷表明，缺陷的形成可能与再生过程有关。

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《Electronic Components and Technology Conference, 1994. Proceedings., 44th》|1994年|P.625-631|共7页
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Han; H.; Boudreau; R.;
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中图分类无线电电子学、电信技术;
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1. Very simple compensation technique for bent V-grooves in KOH etched (100) silicon when thin structures or deep etching are required [J] . Wacogne B, Zeggari R, Sadani Z, Sensors and Actuators, A. Physical . 2006,第1期

机译：当需要薄结构或深蚀刻时，非常简单的补偿技术，可用于在KOH蚀刻（100）硅中弯曲V形槽
2. Etch Defect Reduction Using SF_6/O_2 Plasma Cleaning and Optimizing Etching Recipe in Photo Resist Masked Gate Poly Silicon Etch Process [J] . Seong Yeol MUN, Kyeong Cheol SHIN, Sung Soo LEE, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第7A期

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3. Etch rates and morphology of silicon (h k l) surfaces etched in KOH and KOH saturated with isopropanol solutions [J] . Zubel I, Kramkowska M Sensors and Actuators, A. Physical . 2004,第2a3期

机译：在KOH和异丙醇溶液饱和的KOH中蚀刻的硅（h k l）表面的蚀刻速率和形态
4. Etching defects on KOH etched silicon-implementation of silicon bench technology for low cost packaging [C] . Han H., Boudreau R., Institute of Electric and Electronic Engineer Electronic Components and Technology Conference . 1994

机译：低成本包装硅台凳技术蚀刻蚀刻硅实施
5. Control of Staebler -Wronski defects in hydrogenated amorphous silicon for the development of low cost solar cell technology. [D] . Pearce, Joshua M. 2004

机译：为开发低成本太阳能电池技术，控制氢化非晶硅中的Staebler -Wronski缺陷。
6. Fabrication of Solid State Nanopore in Thin Silicon Membrane Using Low Cost Multistep Chemical Etching [O] . Muhammad Shuja Khan, John Dalton Williams 2015

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7. Characterisation of anisotropic etching in KOH using network etch rate function model: influence of an applied potential in terms of microscopic properties [O] . Nguyen Q.D., Elwenspoek M. 2006

机译：使用网络蚀刻速率函数模型表征KOH中的各向异性蚀刻：在微观性质方面对施加电位的影响
8. Reactive Sputter Etching of Silicon with Very Low Mask-Material Etch Rates [R] . Horwitz, C. M. 1981

机译：具有极低掩模材料蚀刻速率的硅的反应溅射蚀刻

Etching defects on KOH etched silicon-implementation of silicon bench technology for low cost packaging

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