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Preliminary methodology investigation of mask pattern fidelity for 250-nm design rules

机译:250纳米设计规则的掩模图案保真度的初步方法研究

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Abstract: Techniques have been developed that can quickly and accurately measure corner rounding and contact fill as key indicators of pattern fidelity. Using these techniques, we have examined writing variables for their effect on the lithographic quality of 1.0 $mu@m contact. A small contact is perhaps the most demanding figure to achieve, so the results shown can be considered the worst case for 4X radicle manufacturing at 250 nm design rules. A MEBES 4500 was used as the writing tool, using PBS resist on quartz masks. Standard printing methods, single-phase printing (SPP) and multiphase printing (2X MPP) were examined. Results indicate that excellent corner rounding results can be achieved with small address sizes, regardless of the writing strategy or the dose used. As expected, larger spot sizes increase the amount of corner rounding, regardless of the address. As the pattern address is increased, judicious choices of spot size reduce potential pattern fidelity loss when imaging small contracts and other fine features. Multiphase printing is a technique that offers advantages to the user. Its use of offset scan voting (OSV) is a significant factor in reducing placement errors. MPP (2X) has an additional advantage of providing higher dosages. This provides flexibility in resist choices and in the selection of a process window. With 2X MPP, the user has a wide range of addresses and spot sizes that will give excellent results. The dynamic range of operating conditions possible with 2X MPP when writing 1.0 $mu@m contacts is a reduced subset of those available using SPP, due to the 2X writing grid (output address). Implementation of 2X MPP has been limited on previous MEBES models due to increased write times of multipass writing. The MEBES 4500 data path supports 2X MPP with write times that approximate SPP. The practical operating envelope of both writing strategies are detailed in this paper. Overall, the MEBES 4500 has a large dynamic operating range. When used with a high resolution process, MEBES 4500 provides excellent pattern fidelity to support requirements of 250 nm design rules.!14
机译:摘要:已经开发出可以快速而准确地测量圆角倒圆和接触填充作为图案逼真度的关键指标的技术。使用这些技术,我们检查了写入变量对1.0μm@ m接触光刻质量的影响。较小的接触可能是最苛刻的要求,因此,在250 nm设计规则下,显示的结果对于4X半径制造而言可能是最坏的情况。使用MEBES 4500作为书写工具,在石英掩模上使用PBS抗蚀剂。检查了标准印刷方法,单相印刷(SPP)和多相印刷(2X MPP)。结果表明,无论写策略或使用剂量如何,使用较小的地址大小都可以获得出色的圆角效果。不出所料,较大的光点大小会增加圆角的舍入量,而不管地址如何。随着图案地址的增加,在对小合约和其他精细特征成像时,明智地选择光斑大小可减少潜在的图案保真度损失。多相打印是一种为用户提供优势的技术。它使用偏移扫描投票(OSV)是减少放置错误的重要因素。 MPP(2X)的另一个优势是可以提供更高的剂量。这在抗蚀剂选择和工艺窗口的选择方面提供了灵活性。使用2X MPP,用户可以使用各种地址和光点大小,从而获得出色的结果。由于使用了2X写入网格(输出地址),因此在写入1.0μm触点时,使用2X MPP可能实现的动态工作条件范围是使用SPP时可提供的动态范围的缩小子集。由于增加了多遍写入的写入时间,因此在以前的MEBES型号上限制了2X MPP的实现。 MEBES 4500数据路径支持2X MPP,其写入时间接近SPP。本文详细介绍了这两种写作策略的实际操作范围。总体而言,MEBES 4500具有较大的动态工作范围。当与高分辨率工艺一起使用时,MEBES 4500可提供出色的图案保真度,以支持250 nm设计规则的要求。14

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