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首页> 外文会议>Symposium on GaN and related alloys >Effect of buffer layer and 111/V ratio on the surtace morphology of GaN grown by MBE
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Effect of buffer layer and 111/V ratio on the surtace morphology of GaN grown by MBE

机译：缓冲层和111 / V比对MBE生长的GaN表面形貌的影响

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The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers leads to N-polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Ga-rich as possible, although Ga droplets tend to form. Ga-polar films can be grown on AlN buffer layers, with the surface morphology determined by the conditions of buffer layer deposition as well as the III/V ratio for growth of the GaN layer. Near-stoichimetric buffer layer growth conditions appear to support the flattest surfaces in this case. Three defect types are typically observed in GaN films on AlN buffers, including large and small pits and "loop" defects. It is possible to produce surfaces free from large pit defects by growing thicker films under more Ga-rich conditions. In such cases the surface roughness can be reduced to less than 1 nm RMS.
机译：通过原子力显微镜观察GaN的表面形态，以便在GaN和AlN缓冲层上生长形成N极性膜，其表面强烈取决于所用的助熔剂条件。通过生长尽可能多的Ga可以获得平坦的表面，尽管Ga液滴往往会形成。可以在AlN缓冲层上生长Ga极性膜，其表面形态取决于缓冲层沉积的条件以及GaN层生长的III / V比。在这种情况下，接近化学计量的缓冲层生长条件似乎支持最平坦的表面。通常在AlN缓冲层上的GaN膜中观察到三种缺陷类型，包括大和小凹坑和“环形”缺陷。通过在更富Ga的条件下生长较厚的薄膜，可以生产出无大坑缺陷的表面。在这种情况下，表面粗糙度可以减小到小于1 nm RMS。

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