Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

机译：使用LAPLACE-DLTS掺杂掺杂GA或B的CZ和外延Si中产生的缺陷的表征

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We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.

机译：通过使用常规和拉普拉斯深度瞬态光谱（L）-DLTS来测量用电子照射掺杂有B或Ga的外延和Czochralski-Growl Si中产生的缺陷的电气和退火性能。使用L-DLTS，我们已经能够解决几种无法使用传统DLT解决的缺陷。 L-DLTS提供了新的途径，用于研究B-和GA-掺杂Si的缺陷介绍率和退火动力学。还研究了缺陷的同胞影型退火行为。

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《International Conference on Defects in Semiconductors》|2006年||共4页
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Cloud Nyamhere; P.N.K. Deenapanray; F.D. Auret; F.C. Farlow;
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中图分类材料;
关键词
defects; laplace DLTS; czochralski Si; gallium doping;

机译：缺陷;拉普拉斯基;Czochralski si;镓掺杂;

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1. Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS [J] . Nyamhere C, Deenapanray PNK, Auret FD, Physica, B. Condensed Matter . 2006,第0期

机译：使用Laplace-DLTS表征Cz和掺杂Ga或B的外延Si中产生的缺陷
2. Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS [J] . Nyamhere C, Deenapanray PNK, Auret FD, Physica, B. Condensed Matter . 2006,第0期

机译：使用Laplace-DLTS表征Cz和掺杂Ga或B的外延Si中产生的缺陷
3. Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) [J] . Nyamhere C, Das AGM, Auret FD, Physica, B. Condensed Matter . 2009,第22期

机译：使用深能级瞬态光谱（DLTS）和Laplace-DLTS（LDLTS）通过3 keV Ar溅射法对掺Sb的Ge中引入的缺陷进行表征
4. Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS [C] . Cloud Nyamhere, P.N.K. Deenapanray, F.D. Auret, International Conference on Defects in Semiconductors . 2006

机译：使用LAPLACE-DLTS掺杂掺杂GA或B的CZ和外延Si中产生的缺陷的表征
5. Doping and defect studies of epitaxial gallium nitride. [D] . Gregie, Joel M. 2004

机译：外延氮化镓的掺杂和缺陷研究。
6. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping [O] . Goutam Kumar Dalapati, Terence Kin Shun Wong, Yang Li, 2012

机译：利用原子层沉积的TiO2 / Al2O3栅叠层表征外延GaAs MOS电容器：Ge自掺杂和p型Zn掺杂的研究
7. Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS [O] . Nyamhere, Cloud, Deenapanray, P.N.K., Farlow, F.C., 2006

机译：使用Laplace-DLTs表征在Cz和用Ga或B掺杂的外延si中产生的缺陷

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

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