Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Nyamhere C; Deenapanray PNK; Auret FD; Farlow FC

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Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

机译：使用Laplace-DLTS表征Cz和掺杂Ga或B的外延Si中产生的缺陷

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We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-cloped Si. The isochronal annealing behaviour of the defects was also investigated. (c) 2005 Elsevier B.V. All rights reserved.

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《Physica, B. Condensed Matter》 |2006年第0期|共4页
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Nyamhere C; Deenapanray PNK; Auret FD; Farlow FC;
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defects; Laplace DLTS; Czochralski Si; gallium doping; TRANSIENT SPECTROSCOPY; SILICON; SEMICONDUCTORS;

机译：缺陷;拉普拉斯DLTS;切克拉斯基Si;镓掺杂;瞬态光谱;硅;半导体;

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专利

1. Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS [J] . Nyamhere C, Deenapanray PNK, Auret FD, Physica, B. Condensed Matter . 2006,第0期

机译：使用Laplace-DLTS表征Cz和掺杂Ga或B的外延Si中产生的缺陷
2. Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) [J] . Nyamhere C, Das AGM, Auret FD, Physica, B. Condensed Matter . 2009,第22期

机译：使用深能级瞬态光谱（DLTS）和Laplace-DLTS（LDLTS）通过3 keV Ar溅射法对掺Sb的Ge中引入的缺陷进行表征
3. Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (Ⅱ) ―Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping― [J] . Katsuhiko NAKAI, Koichi KITAHARA, Yasumitsu OHTA, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第4APt1期

机译：氮掺杂直拉生长硅衬底上外延层的晶体缺陷（Ⅱ）“通过控制晶体生长条件和碳共掺杂抑制外延层中的晶体缺陷”
4. Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS [C] . Cloud Nyamhere, P.N.K. Deenapanray, F.D. Auret, International Conference on Defects in Semiconductors . 2006

机译：使用LAPLACE-DLTS掺杂掺杂GA或B的CZ和外延Si中产生的缺陷的表征
5. Doping and defect studies of epitaxial gallium nitride. [D] . Gregie, Joel M. 2004

机译：外延氮化镓的掺杂和缺陷研究。
6. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping [O] . Goutam Kumar Dalapati, Terence Kin Shun Wong, Yang Li, 2012

机译：利用原子层沉积的TiO2 / Al2O3栅叠层表征外延GaAs MOS电容器：Ge自掺杂和p型Zn掺杂的研究
7. Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS [O] . Nyamhere, Cloud, Deenapanray, P.N.K., Farlow, F.C., 2006

机译：使用Laplace-DLTs表征在Cz和用Ga或B掺杂的外延si中产生的缺陷

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

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