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首页> 外文会议>The Meeting of the Electrochemical Society >PHYSICAL ANALYSIS AND MODELING OF PLASMA ETCHING MECHANISM FOR ULSI APPLICATION
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PHYSICAL ANALYSIS AND MODELING OF PLASMA ETCHING MECHANISM FOR ULSI APPLICATION

机译：ULSI应用等离子体蚀刻机制的物理分析与建模

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Due to the miniaturization and high integration of a semiconductor device,development cost increases.Therefore,many researchers challenge to develop the simulation technology for reducing the number of experimental trials and the development period.Device simulation with a physical model and process simulations,such as impurity diffusion,have been utilized for developing process and devices.However,the topography simulation used to predict the profile of plasma etching or deposition is not used for developing process.We developed practical RIE (Reactive Ion Etching) topography simulation which is integrating the plasma simulation with the surface reaction model.This topography simulation could reproduce RIE profile correctly,and it was shown that it is effective in developing and optimizing RIE process.
机译：由于半导体器件的小型化和高集成，开发成本增加。因此，许多研究人员挑战开发用于减少实验试验数量的仿真技术和发展期。具有物理模型和过程模拟的仿真，如杂质扩散已被用于开发过程和装置。然而，用于预测等离子体蚀刻或沉积轮廓的形貌模拟不用于开发过程。我们开发的实用RIE（反应离子蚀刻）形貌模拟​​，其整合等离子体用表面反应模型进行仿真。这种形貌模拟可以正确再现RIE简介，并表明它在开发和优化RIE过程方面是有效的。

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