PHYSICAL ANALYSIS AND MODELING OF PLASMA ETCHING MECHANISM FOR ULSI APPLICATION

机译：ULSI应用等离子刻蚀机理的物理分析与建模

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A Reactive ion etching (RIE) topography simulation which integrates plasma simulation, sheath model and surface reaction model is developed. This simulation is applied to SiO_2 etching process for high aspect contact hole. The etching profile obtained with RIE topography simulation is in good agreement with SEM photographs even when process conditions are changed. The etching profiles such as bowing and taper shape, and the change of etching profile with the advancement of RIE are accurately reconstructed in the high aspect ratio hole. It is considered that it is possible to estimate the limitations of RIE process and to obtain the optimum process conditions.

机译：开发了将等离子体模拟，鞘模型和表面反应模型相结合的反应离子蚀刻（RIE）形貌模拟。该模拟被应用于高纵横接触孔的SiO_2刻蚀工艺。即使当工艺条件发生变化时，通过RIE形貌模拟获得的蚀刻轮廓也与SEM照片非常吻合。在高深宽比的孔中，可以精确地重建诸如弯曲和锥度形状的蚀刻轮廓，以及随着RIE的进行蚀刻轮廓的变化。认为可以估计RIE工艺的局限性并获得最佳工艺条件。

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来源
《Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR》|2003年|P.421-433|共13页
会议地点 Paris(FR);Paris(FR)
作者
M. Kanoh; S. Onoue; K. Nishitani; T. Shinmura; K. Iyanagi; S. Kinoshita; S.Takagi;
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作者单位

Corporate Manufacturing Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama, Kanagawa, Japan 235-0017;

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原文格式 PDF
正文语种 eng
中图分类大规模集成电路、超大规模集成电路;
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1. Model-Based Analysis of the ZrO_2 Etching Mechanism in Inductively Coupled BCl_3/Ar and BCl_3/CHF_3/Ar Plasmas [J] . Mansu Kim, Nam-Ki Min, Sun Jin Yun, ETRI journal . 2008,第3期

机译：基于模型的BCl_3 / Ar和BCl_3 / CHF_3 / Ar等离子体耦合ZrO_2刻蚀机理的分析
2. Model-Based Analysis of the ZrO2 Etching Mechanism in Inductively Coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas [J] . Mansu Kim, Nam-Ki Min, Sun Jin Yun, ETRI journal . 2008,第3期

机译：基于模型的BCl3 / Ar和BCl3 / CHF3 / Ar等离子体耦合ZrO2蚀刻机理的分析
3. Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy [J] . Gaboriau F, Cartry G, Peignon MC, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2006,第9期

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4. PHYSICAL ANALYSIS AND MODELING OF PLASMA ETCHING MECHANISM FOR ULSI APPLICATION [C] . M.Kanoh, S.Onoue, K.Nishitani, The Meeting of the Electrochemical Society . 2003

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PHYSICAL ANALYSIS AND MODELING OF PLASMA ETCHING MECHANISM FOR ULSI APPLICATION

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