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首页> 外文会议>Conference on MEMS/MOEMS Technologies and Applications >Fabrication of anisotropic structures with large aspect ratio and minimal roughness by using black silicon method
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Fabrication of anisotropic structures with large aspect ratio and minimal roughness by using black silicon method

机译：使用黑色硅方法制造具有大纵横比的各向异性结构，最小的粗糙度

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Anisotropic reactive ion etching of silicon has been widely used in fabrication of diffractive optical elements, waveguides and structures of Micro-Electro-Mechanical Systems (MEMS) in recent years. It is important to achieve minimal roughness on both horizontal surfaces and sidewalls in reactive ion etching (RIE) of silicon. Now reactive ion etching of silicon in an RF parallel plate system, using SF6/O2/CHF3 plasmas, has been experimentally studied. Black silicon method (BSM) is a powerful tool that can be used to find the best conditions under which the anisotropic etching of silicon is optimized. In the process of etching silicon, SF6 serves as the major reactive etching species on silicon, while O2 is added to build the passivation layer on the sidewalls and surfaces to get anisotropic profiles and CHF3 to suppress the formation of passivation on horizontal surfaces in order to achieve smooth etch surfaces. BSM provides a convenient way to know the function of the gases adding into the RIE and to find how to adjust the proportion of the gas combination. Experimental parameters including the etching rate, selectivity, anisotropy, and self-bias voltage under different parameters have been examined through SEM and AFM. As a result, anisotropic etching conditions and the parameters corresponding to the minimal roughness on the surfaces were obtained.
机译：硅的各向异性反应离子蚀刻广泛用于近年来制造衍射光学元件，波导和微电机械系统（MEMS）的结构。重要的是在硅的反应离子蚀刻（RIE）中的水平表面和侧壁上实现最小的粗糙度。现在，使用SF6 / O2 / CHF3等离子体在RF平行板系统中的硅的反应离子蚀刻，已经通过SF6 / O2 / CHF3等离子体进行了实验研究。黑色硅方法（BSM）是一种强大的工具，可用于找到优化硅的各向异性蚀刻的最佳条件。在蚀刻硅的过程中，SF6用作硅上的主要反应蚀刻物质，而O2被添加以在侧壁和表面上构建钝化层，以获得各向异性曲线和CHF3以抑制水平表面上的钝化形成。实现光滑的蚀刻表面。 BSM提供了一种方便的方法来了解加入RIE的气体功能，并找到如何调整气体组合的比例。通过SEM和AFM检查了包括蚀刻速率，选择性，各向异性和自偏置电压的实验参数。结果，获得了各向异性蚀刻条件和对应于表面上最小粗糙度的参数。

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