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Fabrication of anisotropic structures with large aspect ratio and minimal roughness by using black silicon method

机译：黑硅法制备高纵横比，粗糙度最小的各向异性结构

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Anisotropic reactive ion etching of silicon has been widely used in fabrication of diffractive optical elements, waveguides and structures of Micro-Electro-Mechanical Systems (MEMS) in recent years. It is important to achieve minimal roughness on both horizontal surfaces and sidewalls in reactive ion etching (RIE) of silicon. Now reactive ion etching of silicon in an RF parallel plate system, using SF_6/O_2/CHF_3 plasmas, has been experimentally studied. Black silicon method (BSM) is a powerful tool that can be used to find the best conditions under which the anisotropic etching of silicon is optimized. In the process of etching silicon, SF_6 serves as the major reactive etching species on silicon, while O_2 is added to build the passivation layer on the sidewalls and surfaces to get anisotropic profiles and CHF_3 to suppress the formation of passivation on horizontal surfaces in order to achieve smooth etch surfaces. BSM provides a convenient way to know the function of the gases adding into the RIE and to find how to adjust the proportion of the gas combination. Experimental parameters including the etching rate, selectivity, anisotropy, and self-bias voltage under different parameters have been examined through SEM and AFM. As a result, anisotropic etching conditions and the : parameters corresponding to the minimal roughness on the surfaces were obtained.
机译：近年来，硅的各向异性反应离子刻蚀已广泛用于衍射光学元件，波导和微机电系统（MEMS）的结构的制造中。在硅的反应离子刻蚀（RIE）中，在水平表面和侧壁上实现最小粗糙度非常重要。现在，已经通过实验研究了使用SF_6 / O_2 / CHF_3等离子体在RF平行板系统中对硅进行反应性离子刻蚀。黑硅方法（BSM）是一种功能强大的工具，可用于查找最佳条件，在该条件下可以优化硅的各向异性刻蚀。在蚀刻硅的过程中，SF_6是硅上的主要反应性蚀刻物质，同时添加O_2以在侧壁和表面上形成钝化层以获得各向异性轮廓，而CHF_3则可以抑制水平表面上的钝化形成，从而实现平滑的蚀刻表面。 BSM提供了一种方便的方法来了解添加到RIE中的气体的功能，并找到如何调整气体组合的比例。通过SEM和AFM检查了不同参数下的刻蚀速率，选择性，各向异性和自偏压等实验参数。结果，获得了与表面上的最小粗糙度相对应的各向异性蚀刻条件和：参数。

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