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首页> 外文会议>Reliability of Compound Semiconductors Workshop >Full Band Ensemble Monte Carlo Simulations for Reliability Investigation of High-Voltage Single Double Heterojunction Bipolar Transistors for Military And Base Station Applications including a proposed High Breakdown Composite Collector Design
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Full Band Ensemble Monte Carlo Simulations for Reliability Investigation of High-Voltage Single Double Heterojunction Bipolar Transistors for Military And Base Station Applications including a proposed High Breakdown Composite Collector Design

机译：全乐队集成蒙特卡罗仿真，用于高压单双异相结合双极晶体管的可靠性调查，用于军用和基站应用，包括提出的高击穿复合材料集电极设计

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High-voltage HBTs are gaining considerable interest for emerging military and commercial CATV and microwave base station applications. Understanding of carrier transport and dynamics assumes vital importance to establish safe operating areas (SOAs) for these devices in order to avoid detrimental effects such as impact ionization leading to device breakdown. Contemporary formalisms based on 'drift-diffusion' theories suffer from several shortcomings in accurate modeling of charge transport under such high-field regimes through sub-micron device geometries. Our comprehensive 'full-band' ensemble Monte Carlo simulations model charge transport through n-GaInP/p+GaAs/n-GaAs single heterojunction bipolar transistors (SHBTs), while establishing the ionization coefficients and v-F characteristics for the collector region. Double heterojunction bipolar transistors (DHBTs) involving a composite collector design (CCD) with wide bandgap materials hold greater promise in pushing the Johnson figure-of-merit for high voltage applications. However, CCD implementation involves numerous challenges, including but not limited to the following: lattice matching to GaAs, negligible conduction band offset at all heterojunctions to avoid current blocking due to potential 'spike', low effective mass and high electron velocity, acceptable dielectric permittivity, wide separation between valence and conduction band to avoid high-field tunneling, high breakdown strength and impact ionization threshold energies. We discuss a high-breakdown composite collector DHBT which incorporates all these desirable aspects.
机译：高压HBT对新出现的军事和商业CATV和微波基站应用来说越来越大。对载波运输和动力学的理解假设为这些设备建立安全操作区域（SOA）至关重要，以避免诸如撞击电离导致器件故障的抗损影响。基于“漂移 - 扩散”理论的当代形式主义在通过亚微米装置几何形状下，在这种高场制度下的准确建模中遭受了几种缺点。我们全面的“全乐队”集团蒙特卡罗模拟模型通过N-GAINP / P + GAAS / N-GAAS单个异质结双极晶体管（SHBT），同时建立集电极区域的电离系数和V-F特性。具有宽带隙材料的复合集电极设计（CCD）的双异形连接双极晶体管（DHBT）具有更大的承诺推动Johnson of Mate的高压应用。然而，CCD实施涉及许多挑战，包括但不限于以下内容：与GaAs的格子匹配，在所有异质功能下偏离的传导带偏移，以避免由于潜在的“尖峰”，低有效质量和高电子速度，可接受的介电介电常数。 ，宽度与传导带之间的宽分离，以避免高场隧道，高击穿强度和冲击电离阈值能量。我们讨论一个高击穿复合集电极DHBT，其中包含所有这些所需的方面。

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