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Modeling of Substrate Current Measurement and Charge Transfer in Insulators

机译：绝缘子中衬底电流测量和电荷转移的建模

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We compare substrate current (SC) values for thin SiO_2 films, with thicknesses ranging from 2 nm to 200 nm, between modeled simulation results and actual measurements made by EB-SCOPE, a substrate current measuring instrument. The simulation models use Monte Carlo methods to model the generation of secondary electrons (SE) and holes, and use 1-D charge transfer to simultaneously model SE yield and SC values to quantify thin film thickness in order to predict if a high aspect ratio contact or via hole is closed or open. The simulation results show a strong match with the measurement data. The SC value can be used for assessing process uniformity as well as detecting process related failures, in this case a closed contact hole which can be seen in the qualitative SC images. We can also apply this modeling to monitoring of surface preparation and clean processes to detect residual films such as SiO_2. The method can detect changes in surface state conditions, such as residue or oxide formation, as changes in SC values.
机译：我们将模拟的模拟结果与由衬底电流测量仪器EB-SCOPE进行的实际测量结果进行比较，得出厚度为2 nm至200 nm的SiO_2薄膜的衬底电流（SC）值。仿真模型使用蒙特卡洛方法对二次电子（SE）和空穴的生成进行建模，并使用一维电荷转移同时对SE产率和SC值进行建模以量化薄膜厚度，从而预测高纵横比是否接触或通孔被关闭或打开。仿真结果显示与测量数据非常匹配。 SC值可用于评估过程均匀性以及检测与过程相关的故障，在这种情况下，可以在定性SC图像中看到封闭的接触孔。我们还可以将此模型应用于表面准备和清洁过程的监控，以检测残留的膜，例如SiO_2。该方法可以检测表面状态条件的变化，例如残留物或氧化物的形成，以及SC值的变化。

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