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Leakage monitoring and control with an advanced e-beam inspection system

机译:用先进的电子束检测系统泄漏监控和控制

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Junction leakage control is studied with electron beam (e-beam) defect inspection after tungsten chemical mechanical polishing (WCMP). Leakage-induced bright voltage contrast (BVC) defects are detected. For both wafer to wafer (WtW) and within wafer (WiW), e-beam inspection results strongly correlate with leakage results of wafer acceptance test (WAT). Failure analysis results showed that the junction leakage was caused by lateral diffusion of nickel silicide (NiSi) underneath the spacer. The extrusion length correlates with gray levels of the tungsten plug very well. In this study we found the optimized condition to suppress junction leakage and also confirmed that post WCMP e-beam inspection can be used to monitor and control junction leakage.
机译:在钨化学机械抛光(WCMP)之后,使用电子束(E-Beam)缺陷检查研究了结漏控制。检测到泄漏诱导的亮电压对比度(BVC)缺陷。对于晶片到晶片(WTW)和晶片(WiW)内的晶片,电子束检测结果与晶片验收测试(WAT)的泄漏结果强烈相关。故障分析结果表明,结硅硅化物(NISI)下方的横向扩散引起了结漏。挤出长度与灰级堵塞的灰度相连。在这项研究中,我们发现抑制结漏的优化条件,并确认了WCMP电子束检测后的柱子监测和控制结漏。

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