Leakage Monitoring and Control with an Advanced e-Beam Inspection System

机译：借助先进的电子束检查系统进行泄漏监控

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Junction leakage control is studied with electron beam (e-beam) defect inspection after tungsten chemical mechanical polishing (WCMP). Leakage-induced bright voltage contrast (BVC) defects are detected. For both wafer to wafer (WtW) and within wafer (WiW), e-beam inspection results strongly correlate with leakage results of wafer acceptance test (WAT). Failure analysis results showed that the junction leakage was caused by lateral diffusion of nickel silicide (NiSi) underneath the spacer. The extrusion length correlates with gray levels of the tungsten plug very well. In this study we found the optimized condition to suppress junction leakage and also confirmed that post WCMP e-beam inspection can be used to monitor and control junction leakage.

机译：在钨化学机械抛光（WCMP）之后，通过电子束（e-beam）缺陷检查研究结泄漏控制。检测到泄漏引起的亮电压对比度（BVC）缺陷。对于晶圆对晶圆（WtW）以及晶圆内部（WiW），电子束检查结果都与晶圆验收测试（WAT）的泄漏结果密切相关。失效分析结果表明，结泄漏是由间隔物下方的硅化镍（NiSi）的横向扩散引起的。挤压长度与钨塞的灰度非常相关。在这项研究中，我们发现了抑制结泄漏的最佳条件，并证实了WCMP后电子束检查可用于监视和控制结泄漏。

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来源
《Metrology, Inspection, and Process Control for Microlithography XX pt.2》|2006年|P.615249.1-615249.9|共9页
会议地点 San JoseCA(US)
作者
Hermes Liu; J H Yeh; Chan Lon Yang; S C Lei; J Y Kao; Y D Yang; Mingsheng Tsai; S F Tzou; Wei-Yih Wu; Hong-Chi Wu;
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作者单位

Central RD Division, United Microelectronics Corp., No. 18, Nanke 2nd Rd., Tainan Science Park, Tainan County 741, Taiwan, ROC;

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原文格式 PDF
正文语种 eng
中图分类光刻、掩膜;
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Leakage Monitoring and Control with an Advanced e-Beam Inspection System

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