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首页> 外文会议>Metrology, Inspection, and Process Control for Microlithography XX pt.2 >Correlation of Wafer Backside Defects to Photolithography Hot Spots Using Advanced Macro Inspection
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Correlation of Wafer Backside Defects to Photolithography Hot Spots Using Advanced Macro Inspection

机译：使用先进的宏观检测技术将晶圆背面缺陷与光刻热点相关联

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摘要

Defects on the backside of a wafer during processing can come from many sources. Particles and scratches on the backsides of wafers can be caused by wafer handling equipment such as robots and chucks, as well as by CMP processes. In addition, cross-contamination of wafers and handling equipment can occur when wafers move from tool to tool, through the production line. When wafers are exposed, backside defects can cause localized areas of poor lithography pattern resolution on the frontsides of wafers, resulting in increased rework rates, decreased throughput, and yield loss. As minimum feature sizes continue to shrink with each new technology node, devices become denser and exposure tool depth of focus decreases - making the elimination of lithography hot spots an even more critical issue. At a major worldwide IDM, automated macro defect inspection tools for integrated front, edge, and backside inspection have been implemented to inspect wafers at several After Develop Inspection (ADI) and post-etch inspection steps. These tools have been used to detect foreign material and scratches on the backsides of several lots that were caused by another process tool, causing photolithography hot spots. This paper describes advanced macro inspection of wafer front and back surfaces and how the inspection data was used to correlate backside defects to photolithography hot spots, and take corrective action.
机译：加工过程中晶圆背面的缺陷可能来自许多来源。晶圆背面的颗粒和划痕可能是由晶圆处理设备（例如机器人和卡盘）以及CMP工艺引起的。另外，当晶片通过生产线从一个工具移动到另一个工具时，会发生晶片和处理设备的交叉污染。暴露晶圆时，背面缺陷会导致晶圆正面的局部光刻图形分辨率差，从而导致返工率提高，生产率降低和成品率下降。随着每个新技术节点的最小特征尺寸不断缩小，器件变得更密集，曝光工具的焦点深度减小，这使得消除光刻热点成为更加关键的问题。在全球主要的IDM中，已经实现了用于集成的正面，边缘和背面检查的自动宏缺陷检查工具，以在多个“显影后检查”（ADI）和蚀刻后检查步骤中检查晶片。这些工具已用于检测由另一种处理工具引起的几批产品背面的异物和划痕，从而引起光刻热点。本文介绍了晶片正面和背面的高级宏观检查，以及如何使用检查数据将背面缺陷与光刻热点相关联并采取纠正措施。

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