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RESIDUAL STRESS OF SILICON FILMS DEPOSITED BY LPCVD FROM SILANE

机译：硅烷的LPCVD沉积硅膜的残余应力

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In this paper, amorphous, semi-crystalline and polycrystalline silicon films have been deposited by low pressure chemical vapour deposition (LPCVD) from silane SiH_4 by ranging the deposition temperature from 555 to 635℃ and the total pressure from 100 to 300 millitorrs. Films residual stresses have been determined thanks to the formula of Stoney by measurements of the wafer curvature before and after removal of the back side deposition. The influences of the different deposition parameters are reported and major stress variations are evidenced. By studying the effects of a 600℃ crystallisation anneal and by comparing them to those observed for amorphous silicon films deposited from disilane Si_2H_6, compressive and tensile stresses are respectively related to "surface" and "volume" crystallisation phenomena. The different stress values of amorphous and polycrystalline silicon have been estimated and, according to these results, solutions are finally proposed in order to have a real control of residual stress into siliconrndepositions and to obtain low stress (σ ≈ 0) polysilicon films.
机译：本文通过低压化学气相沉积法（LPCVD）从硅烷SiH_4沉积非晶态，半结晶和多晶硅膜，沉积温度范围为555至635℃，总压力为100至300毫托。得益于Stoney公式，通过测量背面沉积去除前后的晶圆曲率，可以确定薄膜的残余应力。报告了不同沉积参数的影响，并证明了主要的应力变化。通过研究600℃结晶退火的影响，并将其与从乙硅烷Si_2H_6沉积的非晶硅膜所观察到的结果进行比较，压应力和拉应力分别与“表面”和“体积”结晶现象有关。已经估算出非晶硅和多晶硅的不同应力值，根据这些结果，最终提出了解决方案，以便对残余应力进行真正的控制以沉积到硅沉积中，并获得低应力（σ≈0）的多晶硅膜。

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