Photolutninescence in Silicon-rich PECVD Silicon Oxynitride Alloys

机译：富硅PECVD氮氧化硅合金中的光致发光

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Silicon-rich silicon oxynitride films have been produced by PECVD technique in order to study its photoluminescence. The films with higher silicon content exhibit photoluminescence in the visible spectral region as deposited. On the other hand films with lower silicon content require heat treatment to show appreciable emission. The deposited films were characterized by: Rutherford back scattering (RBS), Raman scattering, Fourier Transform Infrared spectroscopy (FTIR) and photoluminescence (PL). The results suggest that the films present amorphous silicon clusters and the photoluminescence is compatible with a quantum confinement phenomenon in the amorphous silicon clusters.

机译：为了研究其光致发光，已经通过PECVD技术制备了富含硅的氮氧化硅膜。具有较高硅含量的膜在沉积时在可见光谱区域中显示出光致发光。另一方面，具有较低硅含量的膜需要热处理以显示出可观的发射。沉积的薄膜的特征在于：卢瑟福背散射（RBS），拉曼散射，傅立叶变换红外光谱（FTIR）和光致发光（PL）。结果表明该膜存在非晶硅簇，并且光致发光与非晶硅簇中的量子限制现象相容。

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来源
《Microelectronics Technology and Devices-SBMicro 2008》|2008年|349-357|共9页
会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
作者
M.Ribeiro; I.Pereyra;
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作者单位

EP-USP, University of Sao Paulo. P.O. Box 61548, 5424-970, Sao Paulo, Brazil;

EP-USP, University of Sao Paulo. P.O. Box 61548, 5424-970, Sao Paulo, Brazil;

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原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
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专利

1. Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride [J] . Johannes Seiffe, Luca Gautero, Marc Hofmann, Journal of Applied Physics . 2011,第3期

机译：通过等离子体增强化学气相沉积双层富硅氧氮化硅和氮化硅的表面钝化结晶硅
2. Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD [J] . D.S. Chao, J.H.Liang Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2013,第jula15期

机译：PECVD生长的富硅氮化硅薄膜中嵌入的硅纳米晶体光致发光特性的退火温度依赖性
3. Dielectric functions of PECVD-grown silicon nanoscale inclusions within rapid thermal annealed silicon-rich silicon nitride films [J] . A.-S. Keita, A. En Naciri, F. Delachat, Thin Solid Films . 2011,第9期

机译：快速热退火富硅氮化硅膜中PECVD生长的硅纳米级夹杂物的介电功能
4. Photoluminescence in Silicon-rich PECVD Silicon Oxynitride Alloys [C] . M. Ribeiro, I. Pereyra Symposium on Microelectronics Technology and Devices . 2008

机译：富含硅的PECVD氧氮化硅合金的光致发光
5. Effect of silicon content on microstructure, phosphine evolution and spontaneous disintegration of silicon-rich ferrosilicon alloys. [D] . Zhou, Xin. 2000

机译：硅含量对富硅硅铁合金的微观结构，磷化氢和自发崩解的影响。
6. Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride [O] . Daniel Hiller, Julian López-Vidrier, Keita Nomoto, 2018

机译：由磷和硼掺杂的富硅氧化物和氮氧化物生长的硅纳米晶体中没有自由载流子
7. Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride [O] . Daniel Hiller, Julian López-Vidrier, Keita Nomoto, 2018

机译：从磷和硼掺杂的富含氧化硅和氮氧化物生长的硅纳米晶体中没有自由载体

Photolutninescence in Silicon-rich PECVD Silicon Oxynitride Alloys

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