Investigation of composition fluctuations in In_xGa_1-xN

机译：In_xGa_1-xN中成分波动的调查

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The chemical compositions of In_xGa_1-xN/GaN quantum wells are studied with high-resolution transimission electron microscopy (HRTEM) on an atomic scale.The samples were grown by metal organic chemical vapour deposition (MOCVD) on Al_2O_3 (0001) substrates.The In contents were varied by lowering the substrate temperature but with otherwise unaltered growth conditions.Composition fluctuations and average In contents are assessed by the analysis of the local lattice parameters with the evaluation software DALI (digital analysis of lattice images) on the basis of HRTEM images.

机译：In_xGa_1-xN / GaN量子阱的化学组成采用高分辨率透射电子显微镜（HRTEM）进行了原子级研究，样品通过金属有机化学气相沉积（MOCVD）在Al_2O_3（0001）衬底上生长。降低底物温度可改变含量，但生长条件不会改变。通过在HRTEM图像的基础上使用评估软件DALI（晶格图像数字分析）对局部晶格参数进行分析，可以评估成分波动和In的平均值。

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《Microscopy of semiconducting materials 1999》|1999年|p.407-410|共4页
会议地点 Oxford(GB);Oxford(GB)
作者
B Neubauer; E Hahn; A Rosenauer; D Gerthsen; M Heuken;
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正文语种 eng
中图分类机械、仪表工业;
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Investigation of composition fluctuations in In_xGa_1-xN

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