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首页> 外文会议>NATO Advanced Study Institute on Photovoltaic and Photoactive Materials - Properties, Technology and Applications Sep 9-21, 2001 Sozopol, Bulgaria >CREATION AND ANNEALING KINETICS OF LIGHT INDUCED METASTABLE DEFECTS IN a-Si_(1-x)C_x:H
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CREATION AND ANNEALING KINETICS OF LIGHT INDUCED METASTABLE DEFECTS IN a-Si_(1-x)C_x:H

机译：a-Si_（1-x）C_x：H中光诱导的亚稳缺陷的产生和退火动力学

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摘要

We have used the Constant Photocurrent Method and steady-state photoconductivity measurements to investigate the creation and annealing kinetics of light induced metastable defects, and their effect on photocarrier lifetimes, in a set of good quality a-Si_(1-x)C_x:H alloys (x ≤ 0.11) at room temperature. The annealing activation energy distribution for the alloys was deduced using the method proposed by Hata and Wagner. A narrow Gaussian distribution of annealing activation energies, peaking at about 1 eV, accounts for the observed annealing behaviour for the unalloyed sample. For the alloys, the peak positions of the Gaussian distributions shift to higher energies, and their half-widths decrease with increasing carbon content. The relationship between the inverse mobility-lifetime product and the light induced metastable defect density during the creation and annealing cycles were also investigated for these alloys.
机译：我们使用恒定光电流方法和稳态光电导率测量来研究一组优质a-Si_（1-x）C_x：H中光诱导的亚稳态缺陷的产生和退火动力学，及其对光子寿命的影响。室温下的合金（x≤0.11）。使用Hata和Wagner提出的方法推导了合金的退火活化能分布。退火活化能的窄高斯分布（约1 eV峰值）解释了非合金样品的观察到的退火行为。对于合金，高斯分布的峰值位置移向更高的能量，并且其半宽度随着碳含量的增加而减小。还研究了这些合金在生成和退火循环过程中的逆迁移寿命寿命乘积与光诱导的亚稳态缺陷密度之间的关系。

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