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首页> 外文会议>Nitride semiconductors >HIGH TEMPERATURE PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF Er DOPED GALLIUM NITRIDE
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HIGH TEMPERATURE PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF Er DOPED GALLIUM NITRIDE

机译：掺Er的氮化镓的高温光致发光和激发光谱。

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摘要

We report results of high temperature photoluminescence and photoluminescence excitation studies of Er doped GaN. Er was doped into GaN either by ion-implantation or during growth by metalorganic molecular beam epitaxy (MOMBE). Using above gap excitation (λ_(ex)=325nm), GaN:Er showed strong 1.54 μm Er~(3+) luminescence up to 550K which indicates the potential of this material for high temperature opto-electronic applications. In addition, we performed time-resolved photoluminescence excitation (PLE) measurements over the wavelength range 420 to 680 nm using a Nd:YAG pumped Optical Parametric Oscillator (OPO). Similar to our previous PLE results of Er doped A1N, we observed that Er~(3+) ions in GaN can be excited either through resonant pumping of Er~(3+) energy levels or through energy-transfer processes involving defect states. The relative contribution of direct and indirect Er~(3+) excitation, however, seems to depend on the material preparation method.
机译：我们报告了掺Er GaN的高温光致发光和光致发光激发研究的结果。通过离子注入或在金属有机分子束外延（MOMBE）的生长过程中，将Er掺杂到GaN中。使用上述间隙激发（λ_（ex）= 325nm），GaN：Er在高达550K的温度下显示出1.54μmEr〜（3+）的强发光，这表明该材料在高温光电应用中具有潜力。此外，我们使用Nd：YAG抽运的光学参量振荡器（OPO）在420至680 nm的波长范围内进行了时间分辨的光致发光激发（PLE）测量。与我们先前的掺Er的AlN的PLE结果相似，我们观察到GaN中的Er〜（3+）离子可以通过共振泵浦Er〜（3+）能级或通过涉及缺陷状态的能量转移过程来激发。然而，直接和间接Er〜（3+）激发的相对贡献似乎取决于材料制备方法。

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  • 来源
    《Nitride semiconductors》|1997年|685-690|共6页
  • 会议地点 Boston MA(US)
  • 作者

    U. Hoemmerich; Myo Thaik; T. Robinson-Brown; J. D. MacKenzie; C. R. Abernathy; S.J. Pearton; R.G. Wilson; R. N. Schwartz; J. M. Zavada;

  • 作者单位

    Hampton University, Department of Physics, Research Center for Optical Physics, Hampton, VA 23668 Hughes Research Laboratories, Malibu, CA 90265;

    Hampton University, Department of Physics, Research Center for Optical Physics, Hampton, VA 23668;

    Hampton University, Department of Physics, Research Center for Optical Physics, Hampton, VA 23668;

    University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611;

    University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611;

    University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611;

    Hughes Research Laboratories, Malibu, CA 90265;

    Hughes Research Laboratories, Malibu, CA 90265;

    U.S. Army Research Office, Research Triangle Park, NC 27709;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
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