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首页> 外文会议>Novel Materials and Processes for Advanced CMOS >Effect of Nature of the Precursor on Crystallinity and Microstructure of MOCVD-Grown ZrO_2 Thin Films
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Effect of Nature of the Precursor on Crystallinity and Microstructure of MOCVD-Grown ZrO_2 Thin Films

机译：前驱物的性质对MOCVD生长的ZrO_2薄膜的结晶度和微观结构的影响

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摘要

In the present work, we report the deposition of zirconia thin films on Si(100) at various substrate temperatures by low-pressure metalorganic chemical vapor deposition (MOCVD). Three different zirconium complexes, viz., tetrakis(2,4-pentadionato)zirconium(Ⅳ), [Zr(pd)_4], tetrakis(2,2,6,6-tetramethyl-3,5-heptadionato)zirconium(Ⅳ), [Zr(thd)_4], and tetrakis(t-butyl-3-oxo-butanoato)zirconium(Ⅳ), [Zr(tbob)_4] are used as precursors. The relationship between the molecular structures of the precursors and their thermal properties, as examined by TG/DTA is presented. The films deposited using these precursors have distinctly different morphology, though all of them are of the cubic phase. The films grown from Zr(thd)_4 are well crystallized, showing faceted growth at 575℃, whereas the films grown from Zr(pd)_4 and Zr(tbob)_4 are not well crystallized, and display cracks. These differences in the observed microstructure may be attributed to the different chemical decomposition pathways of the precursors during the film growth, which influence the nucleation and the growth processes. This is also evidenced by the different kinetics of growth from these three precursors under otherwise identical CVD conditions. The details of thin film deposition, and film microstructure analysis by XRD and SEM is presented. The dielectric behavior of the films deposited from different precursors, as studied by C-V measurements, are compared.
机译：在本工作中，我们报告了通过低压金属有机化学气相沉积（MOCVD）在各种衬底温度下在Si（100）上沉积氧化锆薄膜。三种不同的锆配合物，即四（2,4-五元乙酮）锆（Ⅳ），[Zr（pd）_4]，四（2,2,6,6-四甲基-3,5-庚二酮）锆（Ⅳ） ），[Zr（thd）_4]和四（叔丁基-3-氧代-丁酸基）锆（Ⅳ），[Zr（tbob）_4]被用作前体。 TG / DTA检验了前驱体分子结构与其热性能之间的关系。尽管所有这些前体都是立方相，但使用这些前体沉积的膜具有明显不同的形态。由Zr（thd）_4生长的薄膜结晶良好，在575℃时显示出多面生长，而由Zr（pd）_4和Zr（tbob）_4生长的薄膜结晶不好，并显示出裂纹。观察到的微观结构的这些差异可能归因于薄膜生长过程中前体的不同化学分解途径，这会影响成核和生长过程。这也由在相同的CVD条件下这三种前体的生长动力学不同证明。介绍了薄膜沉积的详细信息，以及通过XRD和SEM进行的薄膜微结构分析。比较了通过C-V测量研究的从不同前体沉积的薄膜的介电性能。

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