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Oriented Growth of Thin Films of Samarium Oxide by MOCVD

机译：MOCVD法定向生长氧化mar薄膜

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Thin films of samarium oxide, Sm_2O_3, have been grown on Si(100) and fused quartz by low-pressure MOCVD using an adducted p-diketonate precursor developed in house. It is found that the nature of the film grown is strongly dependent on substrate temperature. As examined by X-ray diffraction, the films of Sm_2O_3 grown at lower temperatures (～550℃) on fused quartz are cubic and display a random grain orientation, while they become highly oriented in the (111) direction as the growth temperature is increased (to 625℃). On Si(100), highly oriented films of cubic Sm_2O_3 are obtained at a substrate temperature of 625℃. When the growth temperature is raised, the phase changes to monoclinic. The morphology of the films grown on both quartz and Si(100) substrates has been studied by scanning electron microscopy and atomic force microscopy. The growth of strongly oriented Sm_2O_3 on the disordered surface of fused quartz may be interpreted as being driven by the minimization of surface energy.
机译：house氧化膜Sm_2O_3的薄膜已经在Si（100）和熔融石英上通过低压MOCVD进行了生长，采用的是内部开发的加成对二酮酸酯前体。已经发现，所生长的膜的性质强烈依赖于基板温度。 X射线衍射分析表明，在较低温度（〜550℃）下，熔融石英上生长的Sm_2O_3膜呈立方晶并显示出随机的晶粒取向，而随着生长温度的升高，它们在（111）方向上呈高度取向。 （至625℃）。在Si（100）上，在625℃的衬底温度下获得立方Sm_2O_3的高取向膜。当生长温度升高时，相变为单斜晶。通过扫描电子显微镜和原子力显微镜研究了在石英和Si（100）衬底上生长的薄膜的形貌。强取向的Sm_2O_3在熔融石英无序表面上的生长可以解释为是由表面能的最小化驱动的。

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