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首页> 外文会议>Novel Materials and Processes for Advanced CMOS >Physical and Electrical Properties of Al_2O_3, HfO_2, and their Alloy Films Prepared by Atomic Layer Deposition for 65nm CMOS Gate Dielectric
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Physical and Electrical Properties of Al_2O_3, HfO_2, and their Alloy Films Prepared by Atomic Layer Deposition for 65nm CMOS Gate Dielectric

机译：65nm CMOS栅介质的原子层沉积制备的Al_2O_3，HfO_2及其合金膜的物理和电学性质

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摘要

We have investigated physical and electrical properties of Al_2O_3, HfO_2, and their alloy films deposited on 300mm Si wafers by Atomic Layer Deposition (ALD). It is found that Al_2O_3 films are not crystallized even after the heat treatment of 1050?, while HfO_2 films are already crystallized even after a-Si deposition (530℃). The crystallization temperature can be higher by adding Al_2O_3 to HfO_2. It is confirmed by in-plane XRD and plane views of TEM that HfAlO_x films with lower Hf content (Hf/(Hf+Al) <30%) are amorphous without phase separation after annealing at 1050℃ and 5sec. The dependences of equivalent oxide thicknesses (EOT) on the physical thicknesses of Al_2O_3, HfAlO_x(Hf/(Hf+Al)～22%), and HfO_2 films in poly-silicon gate capacitors indicate that those dielectric constants k are ～9, 14, and 23, respectively. The gate dielectric with EOT of 1.5nm and the leakage current density J_g of 3mA/cm~2 can be fabricated with 2nm-thick HfAlO_x (22%) film.
机译：我们已经研究了通过原子层沉积（ALD）在300mm硅晶片上沉积的Al_2O_3，HfO_2及其合金膜的物理和电学性质。结果表明，即使经过1050的热处理，Al_2O_3膜也不会结晶，而即使沉积了a-Si（530℃），HfO_2膜也已经结晶了。通过向HfO_2中添加Al_2O_3，可以提高结晶温度。通过平面X射线衍射和TEM的平面图证实，具有较低Hf含量（Hf /（Hf + Al）<30％）的HfAlO_x薄膜在1050℃和5秒退火后无相分离。多晶硅栅电容器中等效氧化物厚度（EOT）对Al_2O_3，HfAlO_x（Hf /（Hf + Al）〜22％）和HfO_2膜的物理厚度的依赖性表明，这些介电常数k为〜9、14 ，和23。用2nm厚的HfAlO_x（22％）膜可以制造EOT为1.5nm的栅介质，其漏电流密度J_g为3mA / cm〜2。

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