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Screening the High-k Layer Quality by Means of Open Circuit Potential Analysis and Wet Chemical Etching

机译:通过开路电势分析和湿法化学刻蚀筛选高k层质量

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摘要

A fast way to monitor the quality of high-k dielectric layers is wet etching, either monitored by Open Circuit Potential analysis or by Scanning Electron Microscopy. Defect densities in the order of 1.10~9 defects/cm are observed for as-deposited HfO_2 layers. It is assumed that the mechanism for wet chemical defect observation is either due to crystallization and/or due to an oxygen deficient HfO_2 layer resulting in Si/SiO up-diffusion upon thermal treatment. However, after appropriate post deposition annealing wet etch defect free layers can be prepared.
机译:监测高k介电层质量的一种快速方法是湿法蚀刻,可以通过开路电势分析或通过扫描电子显微镜进行监测。沉积的HfO_2层的缺陷密度约为1.10〜9缺陷/ cm。假设观察湿化学缺陷的机理是由于结晶和/或由于氧不足的HfO_2层导致热处理后Si / SiO向上扩散。然而,在适当的沉积后退火之后,可以制备湿法蚀刻无缺陷层。

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