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Effect of stage synchronization error of KrF scan on 0.18-um patterning

机译:KrF扫描的阶段同步误差对0.18um图案的影响

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Abstract: The stage vibration effect on imaging performance, such as DOF and CD uniformity is evaluated experimentally and compared with simulation analysis. Various kinds of 0.25 - 0.18 micrometer patterns are investigated by using KrF excimer scanner with 0.6 NA and 0.75 partial coherency and two types of chemically amplified positive resists. In the case of a standard resist for 0.25 micrometer level patterning, the CD at the best focus changed and the DOF decreased rapidly with increasing moving standard deviation (MSD) in 0.18 micrometer level pattern formation. Allowable MSD value of L&S pattern was estimated to be around 25 nm. To improve the stage synchronous error margin, the application of a high resolution resist was effective on L&S and isolated space patterns (about 40 nm), but showed little improvement for isolated line and hole patterns. Therefore, totally allowable MSD value was still about 30 nm. In particular it was found that both isolated line and hole patterns were very sensitive to stage vibration effect. Strict stage control has to be required for 0.18 micrometer patterns even if the high resolution resist is used. !11
机译:摘要:通过实验评估台架振动对成像性能的影响,例如自由度和CD均匀度,并与仿真分析进行比较。通过使用具有0.6 NA和0.75部分相干性的KrF准分子扫描仪以及两种化学放大的正型抗蚀剂,研究了各种0.25-0.18微米图案。在用于0.25微米水平图案化的标准抗蚀剂的情况下,随着在0.18微米水平图案形成中移动标准偏差(MSD)的增加,最佳焦点处的CD发生了变化,并且DOF迅速减小。 L&S图案的允许MSD值估计为约25nm。为了提高级同步误差容限,高分辨率抗蚀剂在L&S和孤立的空间图案(约40 nm)上有效,但对孤立的线和孔图案几乎没有改善。因此,完全允许的MSD值仍为约30nm。特别是,发现隔离的线型和孔型都对载物台振动效应非常敏感。即使使用高分辨率抗蚀剂,也必须对0.18微米图案进行严格的平台控制。 !11

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