ArF excimer laser for 193-nm lithography

机译：用于193 nm光刻的ArF准分子激光器

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Abstract: Considerable progress has been made in the development of the major components for 193 nm lithography tools. Here we describe the parameters of a line-narrowed ArF excimer laser for microlithography. With a specified FWHM bandwidth of less than 0.7 pm, the laser is applicable for refractive steppers and scanners which utilize some degree of achromatization. Prototype lasers have been built to study the optimum parameters. The main challenge of the development was the achievement of high efficiency in the conversion from the laser's broadband emission into line-narrowed emission. The lasers are operated at up to 1 kHz repetition rate with a maximum power of 10 W. This paper provides an overview of the currently achievable power levels, energy stability and bandwidths and discusses future trends. !3

机译：摘要：193 nm光刻工具的主要组件的开发已取得了相当大的进展。在这里，我们描述了用于微光刻的细线ArF准分子激光器的参数。在指定的FWHM带宽小于0.7 pm的情况下，该激光器适用于利用了一定程度消色差的折射步进器和扫描仪。已建立原型激光器来研究最佳参数。发展的主要挑战是要实现从激光器的宽带发射到线窄发射的高效转换。激光器以高达1 kHz的重复频率运行，最大功率为10W。本文概述了当前可达到的功率水平，能量稳定性和带宽，并讨论了未来的趋势。！3

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来源
《Optical Microlithography XI》|1998年|p.1010-1013|共4页
会议地点 Santa Clara CA(US)
作者
Uwe Stamm; Lambda Physik GmbH; Goettingen; Germany; Reiner Paetzel; Lambda Physik GmbH; Goettingen; Germany; Juergen Kleinschmidt; Lambda Physik GmbH; Goettingen; Germany; Klaus Vogler; Lambda Physik GmbH; Goettingen; Germany; Wolfgang Zschocke; Lambda Ph;
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正文语种 eng
中图分类轻工业、手工业;
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专利

1. Human corneal ablation threshold using the 193-nm ArF excimer laser. [J] . Berns MW, Chao L, Giebel AW, Investigative ophthalmology & visual science . 1999,第5期

机译：使用193 nm ArF准分子激光的人角膜消融阈值。
2. Development of Photoresists for ArF Excimer Laser Lithography [J] . Nozaki Koji 有機合成化学協会誌 . 2018,第9期

机译：ARF准分子激光光刻的光致抗蚀剂的开发
3. Characterization of photoresists for ArF-excimer laser lithography using monoenergetic positron beams [J] . Uedono A., Ohdaira T., Suzuki R., Journal of Polymer Science, Part B. Polymer Physics . 2004,第2期

机译：使用单能正电子束表征ArF准分子激光光刻的光刻胶
4. Ultra-high-repetition-rate ArF excimer laser with long pulse duration for 193-nm lithography [C] . Koji Kakizaki, Takashi Matsunaga, Yoichi Sasaki, Optical Microlithography XIV . 2001

机译：具有高脉冲持续时间的超高重复率ArF准分子激光器，用于193 nm光刻
5. ArF excimer laser corneal ablation: Effects of laser repetition rate and fundamental laser-tissue coupling. [D] . Shanyfelt, Leia Megan. 2008

机译：ArF准分子激光角膜消融：激光重复频率和基本激光-组织耦合的影响。
6. Use of the 193-NM excimer laser for myopic photorefractive keratectomy in sighted eyes: a multicenter study. [O] . R L Lindstrom, N A Sher, V Chen, 1991

机译：193-NM准分子激光在视力近视眼角膜切除术中的应用：一项多中心研究。
7. High-repetition-rate (6 kHz) and long-pulse-duration (50 ns) ArF excimer laser for sub-65 nm lithography [O] . Kakizaki, Koji, Sasaki, Yoichi, Inoue, Toyoharu, 2006

机译：高重复频率（6 kHz）和长脉冲持续时间（50 ns）的ArF受激准分子激光器，用于低于65 nm的光刻
8. Wet-Developed Bilayer Resists for 193-nm Excimer Laser Lithography [R] . Kunz, R. R., Horn, M. W., Bianconi, P. A., 1992

机译：湿法开发的双层抗蚀剂，用于193纳米准分子激光光刻

ArF excimer laser for 193-nm lithography

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