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EFFECTS OF BUFFER LAYERS ON EPITAXIAL GROWTH OF PMN AND PZN BASED THIN FILMS ON Si

机译:缓冲层对Si上PMN和PZN薄膜的外延生长的影响

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摘要

The effect of the buffer layers on epitaxial growth and perovskite structure development of Pb(Mg_(1/3)Nb_(2/3))O_3 (PMN) and Pb(Zn_(1/3)Nb_(2/3))O_3 (PZN) based thin films on Si was investigated. The films were fabricated by pulsed laser deposition (PLD). On CeO_2/Y_2O_3-stabilized ZrO_2(YSZ) buffered-Si substrates, epitaxial pyrochlore films were obtained and no perovskite phase were detected regardless of the deposition conditions. On the other hand, PMN films of perovskite structure were epitaxially grown with (001) orientation on SrTiO_3/CeO_2/YSZ buffered-Si substrates. These differences were explained in terms of the crystal structural matching and interface stability between film and buffer layer. In addition, it was found that the perovskite structure development of PMN and PZN based thin films could be drastically enhanced by terminating SrTiO_3 surface with SrO atomic layer.
机译:缓冲层对Pb(Mg_(1/3)Nb_(2/3))O_3(PMN)和Pb(Zn_(1 / 3_Nb_(2/3))O_3外延生长和钙钛矿结构形成的影响研究了基于Si的(PZN)基薄膜。薄膜是通过脉冲激光沉积(PLD)制成的。在CeO_2 / Y_2O_3稳定的ZrO_2(YSZ)缓冲Si衬底上,获得了外延烧绿石薄膜,无论沉积条件如何,均未检测到钙钛矿相。另一方面,钙钛矿结构的PMN膜在(SrTiO_3 / CeO_2 / YSZ)缓冲Si衬底上以(001)取向外延生长。这些差异是根据晶体结构匹配和薄膜与缓冲层之间的界面稳定性来解释的。另外,发现通过用SrO原子层终止SrTiO_3表面可以大大增强PMN和PZN基薄膜的钙钛矿结构发展。

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