Vibrational properties associated with isolated defects in cubic silicon carbide

机译：立方碳化硅中与孤立缺陷相关的振动特性

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Comprehensive Greens function calculations are reported in 3C-SiC for impurity modes associated with isolated point defects (donor, acceptors etc.), and defects in 'donor-acceptor' pair configurations. Experimental results from infrared absorption and/or Raman scattering spectroscopy are very much needed to check our theoretical predictions.

机译：在3C-SiC中报告了与孤立点缺陷（施主，受主等）有关的杂质模式以及“施主-受主”对构型中的缺陷的全面Greens函数计算。非常需要红外吸收和/或拉曼散射光谱法的实验结果来检验我们的理论预测。

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《Silicon carbide and related materials》|1993年|283-286|共4页
会议地点 Washington DC(US);Washington DC(US)
作者
D. N. Talwar; Z.C Feng;
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作者单位

Solid State Electronics Directorate, Wright Patterson Air Force Base, Ohio 45433 Department of Physics, Indiana University of Pennsylvania, Indiana, PA 15705-1087;

Department of Physics. National University of Singapore, Singapore 0511;

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会议组织
原文格式 PDF
正文语种 eng
中图分类硅酸盐工业;无机质材料;
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专利

1. Vibrational, elastic, and structural properties of cubic silicon carbide under pressure up to 75 GPa: Implication for a primary pressure scale [J] . K. K. Zhuravlev, Alexander F. Goncharov, S. N. Tkachev, Journal of Applied Physics . 2013,第11期

机译：立方碳化硅在高达75 GPa的压力下的振动，弹性和结构特性：对一次压力标度的含义
2. Theoretical study of intrinsic defects in cubic silicon carbide 3C-SiC [J] . Peter A.Schultz, Renee M.Van Ginhoven, Arthur H.Edwards Physical review.B.Condensed matter and materials physics . 2021,第19期

机译：立方碳化硅3C-SiC中固有缺陷的理论研究
3. Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide [J] . Michael Sch?ler, Clemens Brecht, Peter J. Wellmann Materials . 2019,第15期

机译：退火引起的升华生长立方碳化硅点缺陷性质的变化
4. Vibrational properties associated with isolated defects in cubic silicon carbide [C] . International conference on SiC and related materials . 1994

机译：与立方碳化硅中分离的缺陷相关的振动性质
5. Thin polytype inclusions in 4H silicon carbide epitaxial films and isotope and anharmonic effects in carbon-hydrogen vibrational centers of silicon carbide. [D] . Bai, Song. 2003

机译：4H碳化硅外延膜中的薄多型夹杂物以及碳化硅的碳氢振动中心的同位素和非谐效应。
6. Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide [O] . Michael Schöler, Clemens Brecht, Peter J. Wellmann 2019

机译：退火引起的升华生长立方碳化硅点缺陷性质的变化
7. Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide [O] . Michael Schöler, Clemens Brecht, Peter J. Wellmann 2019

机译：退火诱导的升华生长立方碳化物点缺陷性质的变化
8. Electron Microscopy Studies of Defects in Boron-Sintered Cubic Silicon Carbide [R] . de los Santos Dizon, F. 1977

机译：硼烧结立方碳化硅缺陷的电子显微镜研究

Vibrational properties associated with isolated defects in cubic silicon carbide

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