GaN and AlN OMVPE growth using phenylhydrazine

机译：使用苯肼生长GaN和AlN OMVPE

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

The metallorganic precursor of phenylhydrazine has been used as a nitrogen source to grow GaN and AlN on (100) Si, (100) GaAs and (0001) Sapphire using low pressure MOVPE. The feasibility of GaN and A1N growth is demonstrated and the growth characteristics are analyzed. The growth of GaN took place in the range of 500℃ to 600℃ and growth rates were typically 1μm/hr. TEM studies show the presence of GaN crystallites of about 30nm in size in the layers grown. A shift of 1.3 eV for the Ga_3d binding energy and presence of both atomic nitrogen and partially dissociated fragments of NH and NH_2 was revealed by XPS.

机译：苯肼的金属有机前体已被用作氮源，使用低压MOVPE在（100）Si，（100）GaAs和（0001）蓝宝石上生长GaN和AlN。证明了GaN和AlN生长的可行性，并分析了其生长特性。 GaN的生长发生在500℃至600℃的范围内，生长速率通常为1μm/ hr。 TEM研究表明，在生长的层中存在尺寸约为30nm的GaN微晶。 XPS揭示了Ga_3d结合能的1.3 eV位移以及原子氮以及部分离解的NH和NH_2片段的存在。

著录项

来源
《Silicon carbide and related materials》|1993年|413-415|共3页
会议地点 Washington DC(US);Washington DC(US)
作者
C.H. Hong; D. Pavlidis; K. Hong; K. Wang; J. Singh;
展开▼
作者单位

Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, MI 48109-2122;

Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, MI 48109-2122;

Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, MI 48109-2122;

Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, MI 48109-2122;

Department of Electrical Engineering and Computer Science The University of Michigan, Ann Arbor, MI 48109-2122;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类硅酸盐工业;无机质材料;
关键词

相似文献

外文文献
中文文献
专利

1. Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN [J] . C. McAleese, M.J. Kappers, F.D.G. Rayment, Journal of Crystal Growth . 2004,第1a4期

机译：AlN中间层对无裂纹AlGaN和GaN上AlN / GaN多层MOVPE生长的应变效应
2. The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure [J] . R. Tuelek, E. Arslan, A. Bayrakli, Thin Solid Films . 2014,第jana31期

机译：插入在两个AlN层之间的GaN厚度对晶格匹配的AlInN / AlN / GaN / AlN / GaN双通道异质结构的输运性能的影响
3. Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures [J] . Engin Arslan, Sevil Turan, Sibel Goekden, Thin Solid Films . 2013,第deca2期

机译：AlInN / AlN / GaN单通道和AlInN / AlN / GaN / AlN / GaN双通道异质结构中的电流传输机制
4. GaN and AlN OMVPE growth using phenylhydrazine [C] . International conference on SiC and related materials . 1994

机译：GaN和Aln OMVPE使用苯肼的生长
5. Validation of Vegard's Law for Lattice Matching InxAl 1-xN to GaN and the MOCVD Growth of AlxGa1-xN/AlN for Deep UV LEDs [D] . Foronda, Humberto Miguel. 2017

机译：晶格匹配InxAl 1-xN与GaN的Vegard定律的验证以及用于深紫外LED的AlxGa1-xN / AlN的MOCVD生长
6. Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE [O] . Timothy Ciarkowski, Noah Allen, Eric Carlson, 2019

机译：OMVPE制备的GaN外延层的碳掺入与生长速率之间的关系
7. The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure [O] . Tülek R., Arslan E., Bayrakli A., Turhan S., Gökden S., Duygulu Ö., Kaya A.A., Firat T., Teke A., Özbay E. 2014

机译：插入在两个AlN层之间的GaN厚度对晶格匹配的AlInN / AlN / GaN / AlN / GaN双通道异质结构的输运性能的影响
8. MBE Growth and Characterization of Zincblende GaN and GaN/AlN structures [R] . Song, J. J. , Hauenstein, R. J. 1997

机译：Zincblende GaN和GaN / alN结构的mBE生长和表征

GaN and AlN OMVPE growth using phenylhydrazine

摘要

著录项

相似文献

相关主题

期刊订阅