Department of Materials Science and Engineering, College of Engineering, National Chiao Tung University, Hsinchu 300, Taiwan,Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan;
Department of Materials Science and Engineering, College of Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Materials Science and Engineering, College of Engineering, National Chiao Tung University, Hsinchu 300, Taiwan,Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan;
Department of Materials Science and Engineering, College of Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan;
Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan;
Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan;
Department of Materials Science and Engineering, College of Engineering, National Chiao Tung University, Hsinchu 300, Taiwan,Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan;
Department of Materials Science and Engineering, College of Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
机译:高性能基于GaN的发光二极管的蓝宝石衬底处理:蓝宝石衬底的微图案化及其对基于GaN的发光二极管中光增强的影响
机译:在微结构化Si(001)衬底上生长和制备半极性InGaN / GaN多量子阱发光二极管
机译:图案化蓝宝石衬底上GaN / InGaN紫色发光二极管的生长与制备
机译:氮化镓基发光二极管的内部量子效率更高,且图案化蓝宝石衬底的占空比更大
机译:在碳化硅衬底上生长和制造深紫外发光二极管
机译:无需预激活p型GaN的GaN基发光二极管的制造和表征
机译:在LiAlO2(100)衬底上制造蓝色和绿色非极性InGaN / GaN多量子阱发光二极管