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首页> 外文会议>Thin-Film Coatings for Optical Applications IV; Proceedings of SPIE-The International Society for Optical Engineering; vol.6674 >Graded Silicon Based PECVD Thin Film for Photovoltaic Applications
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Graded Silicon Based PECVD Thin Film for Photovoltaic Applications

机译：用于光伏应用的分级硅基PECVD薄膜

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摘要

Silicon based thin film alloys are deposited using plasma enhanced chemical vapor deposition (PECVD) with silane, ammonia, and nitrous oxide as precursors with different partial pressure ratios. Numerous deposition conditions have been considered to produce films with a wide range of refractive indices. The optical properties of the films are mostly affected by hydrogen content and stoichiometry, which are characterized by means of Fourier Transform Infrared Spectroscopy (FTIR) and X-ray Photoelectron Spectroscopy (XPS) respectively. The results of spectroscopic ellipsometry measurement of the refractive index are correlated with stoichiometry extracted using XPS to enable the prediction of optical properties from process conditions. Based on the film characterization results, a graded index film is deposited to minimize the reflection loss. The optical properties of the film to be used as anti-reflection coating (ARC), I.e. the transmittance and reflectance, are measured using an optical spectrophotometer. In spite of the optical absorption in the high refractive index part of the film, it is shown that by employing a very thin layer of amorphous silicon, it is possible to reduce reflection below conventional graded index films consisting of silicon oxynitride, and still maintain the transmittance required for solar cell applications.
机译：使用等离子增强化学气相沉积（PECVD），以硅烷，氨和一氧化二氮为前驱体，以不同的分压比沉积硅基薄膜合金。已经考虑了许多沉积条件来生产具有宽范围的折射率的膜。薄膜的光学性能主要受氢含量和化学计量学的影响，这分别通过傅立叶变换红外光谱（FTIR）和X射线光电子能谱（XPS）来表征。折射率的椭圆偏振光谱测量结果与使用XPS提取的化学计量相关，从而能够根据工艺条件预测光学性能。根据膜表征结果，沉积渐变折射率膜以使反射损失最小。用作减反射涂层（ARC）的薄膜的光学性能，即透射率和反射率是使用分光光度计测量的。尽管在膜的高折射率部分有光吸收，但显示出通过采用非常薄的非晶硅层，仍可以降低由氧氮化硅组成的常规渐变折射率膜下方的反射，并且仍然保持太阳能电池应用所需的透射率。

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