Coalescence of germanium islands on silicon

机译：硅上锗岛的合并

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The growth of Ge islands on Si (Stranski-Krastanov growth mode) is well known (I.N. Stranski, L.v. Krastanov, Akad. Wiss. Wien, Math.-Naturw. Kl. Abtlg. IIb 146 (1937) 797). At larger Ge coverages the islands coalesce and form a quasi two-dimensional film. We investigated this transition from island growth to quasi two-dimensional films for a rather high Ge deposition rate of 0.25 nm/s. The germanium islands were grown by molecular beam epitaxy. At mean thicknesses of 1.25 and 3.75 nm the surface morphology of Ge depositions was observed by atomic force microscopy as a function of deposition temperature. At temperatures between 500 and 550 deg C, we confirm the 3D-island growth as expected from the Stranski-Krastanov growth mode. But below these temperatures the islands coalesce and form a continuous film (E. Kasper, H. Jorke, J. Vac. Sci. Technol. A 10(4) (1992) 1927). The waviness of the films decrease with decreasing temperatures resulting in smooth layers at 300 deg C growth temperature.

机译：Ge在Si上的生长（Stranski-Krastanov生长模式）是众所周知的（I.N. Stranski，L.v。Krastanov，Akad。Wiss。Wien，Math.-Naturw.Kl。Abtlg。IIb 146（1937）797）。在较大的Ge覆盖率下，这些岛合并并形成一个准二维薄膜。我们研究了从岛状生长到准二维膜的这种转变，其中Ge的沉积速率很高，为0.25 nm / s。锗岛是通过分子束外延生长的。在平均厚度为1.25和3.75 nm处，通过原子力显微镜观察到Ge沉积的表面形态随沉积温度的变化。在500到550摄氏度之间的温度下，我们确认了Stranski-Krastanov生长模式所期望的3D岛增长。但是在这些温度以下，这些岛聚结并形成连续的薄膜（E. Kasper，H. Jorke，J. Vac。Sci。Technol。A 10（4）（1992）1927）。膜的波纹度随温度降低而降低，从而在300摄氏度的生长温度下形成光滑的层。

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来源
《Thin films epitaxial growth and nanostructures》|1998年|p.109-111|共3页
会议地点 Strasbourg(FR)
作者
Claus Schollhorn; Michael Oehme; Matthias Bauer; Erich Kasper;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
Germanium islands; Variation of temperature; High deposition rate; Surface morphology; Molecular beam epitaxy; Atomic force microscope;

机译：锗岛；温度变化；高沉积速率；表面形态分子束外延；原子力显微镜;

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1. Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications [J] . S. A. Claussen, K. C. Balram, E. T. Fei, Optical Materials Express . 2012,第10期

机译：用于芯片上光互连应用的硅波导中锗和锗/硅锗锗量子阱的选择性区域生长
2. Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications [J] . S. A. Claussen, K. C. Balram, E. T. Fei, Optical Materials Express . 2012,第10期

机译：用于芯片上光互连应用的硅波导中锗和锗/硅锗锗量子阱的选择性区域生长
3. Diameter Dependence of Spin Relaxation in Silicon, Silicon-Germanium (Si_(0.7)Ge_(0.3)) and Strained Silicon-Germanium (Si_(0.8)Ge_(0.2)/Si_(0.5)Ge_(0.5)) Nanowires [J] . Bhupesh Bishnoi, Bahniman Ghosh Quantum Matter . 2014,第5期

机译：硅，硅锗（Si_（0.7）Ge_（0.3））和应变硅锗（Si_（0.8）Ge_（0.2）/ Si_（0.5）Ge_（0.5））纳米线中自旋弛豫的直径依赖性
4. Coalescence of germanium islands on silicon [C] . Claus Schollhorn, Michael Oehme, Matthias Bauer, E-MRS conference on thin films epitaxial growth and nanostructures . 1998

机译：硅米兰岛的聚结
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Coalescence of germanium islands on silicon

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