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Comprehensive capacitance-voltage analysis including quantum effects for high-k interfaces on germanium and other alternative channel materials.

机译：全面的电容电压分析，包括锗和其他替代沟道材料上高k界面的量子效应。

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作者
Anwar, Sarkar R. M.;
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作者单位

The University of Texas at Dallas.;

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授予单位 The University of Texas at Dallas.;
学科 Electrical engineering.;Plasma physics.;Condensed matter physics.
学位 Ph.D.
年度 2016
页码 149 p.
总页数 149
原文格式 PDF
正文语种 eng
中图分类康复医学;
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1. Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SiGe and InGaAs: Part I—Model Description and Validation [J] . Sarkar R. M. Anwar, William G. Vandenberghe, Gennadi Bersuker, IEEE Transactions on Electron Devices . 2017,第9期

机译：全面的电容-电压仿真和提取工具，包括高k对SiGe和InGaAs的量子效应：第一部分-模型描述和验证
2. Capacitance-voltage and photoluminescence study of high-k/GaAs interfaces controlled by Si Interface control layer [J] . Masamichi Akazawa, Alina Domanowska, Boguslawa Adamowicz, Journal of Vacuum Science & Technology . 2009,第4期

机译：Si界面控制层控制的高k / GaAs界面的电容电压和光致发光研究
3. Control Of High-k/germanium Interface Properties Through Selection Of High-k Materials And Suppression Of Geo Volatilization [J] . Koji Kita, Toshitake Takahashi, Hideyuki Nomura, Applied Surface Science . 2008,第19期

机译：通过选择高k材料和抑制地球挥发来控制高k /锗界面特性
4. An Analytical Study of Short-Channel Effects of Strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFETs Including Interface Charges [C] . Mirgender Kumar, Sarvesh Dubey, Satyabrata Jit International Conference on Quantum, Nano and Micro Technologies . 2012

机译：应变-Si对绝缘体（SGoi）MOSFET的应变-SI短信效应的分析研究，包括界面电荷
5. Alternative materials for next-generation transistors: High-k/germanium-based MOSFET. [D] . Hsueh, Chein-Lan. 2008

机译：下一代晶体管的替代材料：高k /锗基MOSFET。
6. Analysis of Prognostic Risk Factors Determining Poor Functional Recovery After Comprehensive Rehabilitation Including Motor-Imagery Brain-Computer Interface Training in Stroke Patients: A Prospective Study [O] . Qiong Wu, Yunxiang Ge, Di Ma, 2021

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7. Capacitance-Voltage (CV) Characterization of GaAs/High-k Oxide Interfaces [O] . 2008

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Comprehensive capacitance-voltage analysis including quantum effects for high-k interfaces on germanium and other alternative channel materials.

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