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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Plasma Etch Rates of Porous Silica Low-k Films with Different Dielectric Constants
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Plasma Etch Rates of Porous Silica Low-k Films with Different Dielectric Constants

机译：不同介电常数的多孔硅低k薄膜的等离子体刻蚀速率

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摘要

The reactive ion etch rates of porous silica films with different dielectric constants (k-values) or film densities were measured by varying wafer bias and gas ratio for Ar/C_5F_8/O_2 plasma. Both the etch rates of porous silica films and the optical emission intensities from the etching products (SiF) increased with wafer bias power. Etch rate increased with decreasing k-value of porous silica, whereas SiF emission intensity was maintained constant regardless of k-value, indicating that the amount of etching products escaping from the porous silica surface to the gas phase remained unchanged. From this result it is concluded that mass etch rate, defined as the weight of a porous silica film etched from a unit area per unit time, is constant for Ar/C_5F_8/O_2 plasma.
机译：通过改变Ar / C_5F_8 / O_2等离子体的晶片偏压和气体比，测量具有不同介电常数（k值）或膜密度的多孔二氧化硅膜的反应离子刻蚀速率。多孔二氧化硅膜的蚀刻速率和来自蚀刻产物（SiF）的光发射强度都随晶片偏置功率的增加而增加。蚀刻速率随多孔二氧化硅的k值减小而增加，而SiF发射强度与k值无关而保持恒定，这表明从多孔二氧化硅表面逃逸到气相的蚀刻产物的量保持不变。从该结果得出结论，对于Ar / C_5F_8 / O_2等离子体，质量蚀刻速率是恒定的，该质量蚀刻速率定义为从单位面积每单位时间蚀刻出的多孔二氧化硅膜的重量。

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