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首页> 外文期刊>Journal of Applied Physics >Nano-Raman spectroscopy with metallized atomic force microscopy tips on strained silicon structures
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Nano-Raman spectroscopy with metallized atomic force microscopy tips on strained silicon structures

机译：纳米拉曼光谱技术，在应变硅结构上具有金属化原子力显微镜尖端

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摘要

In this paper, intensity enhancements of the Raman signal from strained silicon films utilizing the tip enhanced Raman spectroscopy (TERS) effect are reported. Specially shaped metallized atomic force microscopy tips have been prepared by sputter deposition of thin silver films onto sharpened quartz tips and subsequent focused ion beam (FIB) modification. Raman signal enhancements of more than 20%, which are attributed to the strained silicon film of 70 nm thickness only, have been obtained due to approaching the TERS tips the laser spot. On samples with patterned trench structures prepared by FIB milling, lateral sample scans have been performed. These scans revealed a resolution of strained silicon lines with center-to-center distances below 250 nm, well below the classical optical diffraction limit. Based on an analysis of the stress state in the strained silicon structures, relaxation effects close to the trench edges have been investigated. The described approach of nano-Raman spectroscopy is promising for strain characterization in devices, e.g., in field-effect transistor structures.
机译：在本文中，报道了利用尖端增强拉曼光谱（TERS）效应增强了应变硅膜的拉曼信号的强度。通过将薄银膜溅射沉积到尖锐的石英尖端上并随后进行聚焦离子束（FIB）修饰，可以制备出特殊形状的金属化原子力显微镜尖端。由于接近TERS尖端激光点，已经获得了仅由于70 nm厚度的应变硅膜而导致的拉曼信号增强超过20％。在通过FIB铣削制备的具有图案化沟槽结构的样品上，已执行横向样品扫描。这些扫描显示出应变硅线的分辨率，中心距小于250 nm，远低于经典的光学衍射极限。基于对应变硅结构中应力状态的分析，研究了靠近沟槽边缘的松弛效应。所描述的纳米拉曼光谱法有望用于器件中例如场效应晶体管结构中的应变表征。

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