Inductively coupled plasma etching of GaAs suspended photonic crystal cavities

R. Braive; L. Le Gratiet; S. Guilet; G. Patriarche; A. Lemaitre; A. Beveratos; I. Robert-Philip; I. Sagnes

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Inductively coupled plasma etching of GaAs suspended photonic crystal cavities

机译：GaAs悬浮光子晶体腔的电感耦合等离子体刻蚀

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The authors studied the dry-etching process by chlorine-based inductively coupled plasma for fabricating GaAs suspended photonic crystal cavities. To achieve low optical loss in such resonators, the photonic crystal holes must demonstrate simultaneously smooth sidewalls and good verticality. The influence of various parameters of the inductively coupled plasma process was investigated: a systematic analysis is provided on the dependency of hole sidewall roughness and shape on the process parameters such as gas mixture, etching power, pressure, and rf bias. The authors show that a combination of high pressure, high bias, and high etching power in an inductively coupled plasma with a Cl_2/N_2 chemistry is beneficial for achieving straight and smooth sidewalls, and wall tilt of less than 4° was obtained.

机译：作者研究了基于氯的电感耦合等离子体的干法刻蚀工艺，以制造GaAs悬浮光子晶体腔。为了在这种谐振器中实现低光损耗，光子晶体孔必须同时显示出光滑的侧壁和良好的垂直度。研究了电感耦合等离子体工艺的各种参数的影响：对孔侧壁粗糙度和形状对工艺参数（如气体混合物，蚀刻功率，压力和rf偏压）的依赖性进行了系统分析。作者表明，在具有Cl_2 / N_2化学成分的感应耦合等离子体中，高压，高偏压和高蚀刻能力的结合有利于获得笔直且光滑的侧壁，并且壁倾斜度小于4°。

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来源
《Journal of Vacuum Science & Technology》 |2009年第4期|1909-1914|共6页
作者
R. Braive; L. Le Gratiet; S. Guilet; G. Patriarche; A. Lemaitre; A. Beveratos; I. Robert-Philip; I. Sagnes;
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作者单位

LPN/CNRS, Route de Nozay, 91460 Marcoussis, France;

LPN/CNRS, Route de Nozay, 91460 Marcoussis, France;

LPN/CNRS, Route de Nozay, 91460 Marcoussis, France;

LPN/CNRS, Route de Nozay, 91460 Marcoussis, France;

LPN/CNRS, Route de Nozay, 91460 Marcoussis, France;

LPN/CNRS, Route de Nozay, 91460 Marcoussis, France;

LPN/CNRS, Route de Nozay, 91460 Marcoussis, France;

LPN/CNRS, Route de Nozay, 91460 Marcoussis, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. Inductively coupled plasma etching of high aspect ratio two-dimensional photonic crystals in Al-rich AIGaAs and AIGaAsSb [J] . A. Larrue, D. Belharet, P. Dubreuil, Journal of Vacuum Science & Technology . 2011,第2期

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3. Effect of sidewall passivation in BCl_3/N_2 inductively coupled plasma etching of two-dimensional GaAs photonic crystals [J] . Kirill A. Atlasov, Pascal Gallo, Alok Rudra, Journal of Vacuum Science & Technology . 2009,第5期

机译：侧壁钝化在二维GaAs光子晶体BCl_3 / N_2电感耦合等离子体刻蚀中的作用
4. Cl/sub 2//O/sub 2/- and Cl/sub 2//N/sub 2/-based inductively coupled plasma etching of photonic crystals in InP: sidewall passivation [C] . van der Heijden, R., Carlstrom, Indium Phosphide and Related Materials, 2005. International Conference on . 2005

机译：基于Cl / sub 2 // O / sub 2 /-和基于Cl / sub 2 // N / sub 2 /的InP中光子晶体的电感耦合等离子体刻蚀：侧壁钝化
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

机译：在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响（使用三氟化甲基），并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
6. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas [O] . Yang Li, Cong Wang, Zhao Yao, 2014

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7. Fabrication of high quality factor GaAs/InAsSb photonic crystal microcavities by inductively coupled plasma etching and fast wet etching [O] . Prieto-González Iván, Muñoz-Camuñez Luis Enrique, González Taboada Alfonso, 2016

机译：通过电感耦合等离子体刻蚀和快速湿法刻蚀制备高品质因子GaAs / InAsSb光子晶体微腔

Inductively coupled plasma etching of GaAs suspended photonic crystal cavities

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