SIMOX wafers: (silicon wafers with a thin superficial silicon film separated from the body by implanted oxygen)

Masaharu Tachimori

首页> 外文期刊>NIPPON STEEL TECHNICAL REPORT >SIMOX wafers: (silicon wafers with a thin superficial silicon film separated from the body by implanted oxygen)

【24h】

SIMOX wafers: (silicon wafers with a thin superficial silicon film separated from the body by implanted oxygen)

机译：SIMOX晶片：（具有通过注入氧气与身体分离的表面硅薄膜的硅晶片）

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The quality of low-dose SIMOX wafers has been markedly improved and are expected to be preomising materials for low-power CMOS devices. This has been accomplished by the optimization of oxygen ion implanta- Tion conditions and annealing conditions, introduction of internal thermal Oxidation technology, control of metal contamination and dust generation In the oxygen ion implanter, and prevention of slipping in the annealing Furnaces.

机译：低剂量SIMOX晶片的质量已得到显着改善，有望成为低功率CMOS器件的主要材料。这是通过优化氧离子注入条件和退火条件，引入内部热氧化技术，控制氧离子注入机中金属污染和粉尘生成以及防止退火炉中打滑来实现的。

著录项

来源
《NIPPON STEEL TECHNICAL REPORT》 |1997年第73期|p.19-26|共8页
作者
Masaharu Tachimori;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类冶金工业;炼钢;
关键词

相似文献

外文文献
中文文献
专利

1. Simox Wafers (Silicon wafers with a thin superficial silicon film separated from the body by implanted oxygen) [J] . M.Tachimori Nippon Steel Technical Report . 1997,第73期

机译：Simox晶片（硅晶片，表面硅薄膜很薄，通过注入的氧气与身体隔离）
2. Nitrogen enhanced oxygen precipitation in Czochralski silicon wafers coated with silicon nitride films [J] . Ma X., Fu L., Yang D. Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

机译：氮增强了覆盖氮化硅膜的切克劳斯基硅片中的氧沉淀
3. In-depth profiling of electron trap states in silicon-on-insulator layers and local mechanical stress near the silicon-on-insulator/buried oxide interface in separation-by-implanted-oxygen wafers [J] . Yoshikata Nakajima, Takahiro Toda, Tatsuro Hanajiri, Journal of Applied Physics . 2010,第12期

机译：植入氧晶片中绝缘体上硅层中电子陷阱状态的深入剖析以及绝缘体上硅/埋入氧化物界面附近的局部机械应力
4. 300 mm Ultra-Thin Advantox/spl trade/ MLD SIMOX wafers manufactured using i2000 oxygen implanter [C] . Blake, J., Dempsey, . 2002

机译：使用i2000氧气注入机制造的300毫米超薄Advantox / spl trade / MLD SIMOX晶圆
5. In-situ curvature and stress analyses for sputtered tungsten silicide/silicon multilayer thin films on silicon wafers. [D] . MacArthur, Kimberly Caitlin. 2010

机译：硅晶片上溅射的硅化钨/硅多层薄膜的原位曲率和应力分析。
6. Electrodeposition of Bi-Te Thin Films on Silicon Wafer and Micro-Column Arrays on Microporous Glass Template [O] . Ning Su, Shuai Guo, Fu Li, 2020

机译：硅晶片上Bi-Te薄膜的电沉积以及微孔玻璃模板上的微柱阵列
7. “Silicon millefeuille” : From a silicon wafer to multiple thin crystalline films in a single step [O] . Hernández García, David, Todorov Trifonov, Trifon, Garin Escriva, Moises, 2013

机译：“silicon millefeuille”：从硅晶片到多个薄晶体薄膜的一步到位

SIMOX wafers: (silicon wafers with a thin superficial silicon film separated from the body by implanted oxygen)

摘要

著录项

相似文献

相关主题

期刊订阅