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Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon

机译：电流密度和刻蚀时间对p型多孔硅光致发光和能带隙的影响

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摘要

Porous silicon samples were formed on p-type silicon wafer by electrochemical method. Metal porous silicon structure was used to obtain the rectifying behavior. Current density and etching time was studied which affect the photoluminescence and energy band gap. Three different groups were prepared using different current density and varying etching time. The optical properties for p-type porous silicon were investigated by photoluminescence (PL) spectroscopy. Findings from study showed that the porous silicon has band gap energy in the range from 1.81 to 2.07 eV. The band gap energy also increased with increasing current density or increasing etching time. The PL peaks showed a steady red color shift from 500 to 800 nm with increasing etching time.
机译：通过电化学方法在p型硅晶片上形成多孔硅样品。使用金属多孔硅结构获得整流行为。研究了影响光致发光和能带隙的电流密度和蚀刻时间。使用不同的电流密度和变化的蚀刻时间准备了三个不同的组。通过光致发光（PL）光谱研究了p型多孔硅的光学性质。研究发现，多孔硅的带隙能范围为1.81至2.07 eV。带隙能量也随着电流密度的增加或蚀刻时间的增加而增加。随着蚀刻时间的增加，PL峰显示出从500 nm到800 nm的稳定红色偏移。

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  • 来源
    《Optical and quantum electronics》 |2016年第3期|194.1-194.8|共8页
  • 作者

    Mohammed Jabbar Hussein; W. Mahmood Mat Yunus; Halimah Mohamed Kamari; Azmi Zakaria; Hind Fadhil Oleiw;

  • 作者单位

    Department of Physics, Science Faculty, Universiti Putra Malaysia (UPM), 43400 Serdang, Malaysia,Laser and Electro-Optic Centre, Directorate of Material Research, Ministry of Science and Technology, Baghdad, Iraq;

    Laser and Electro-Optic Centre, Directorate of Material Research, Ministry of Science and Technology, Baghdad, Iraq;

    Laser and Electro-Optic Centre, Directorate of Material Research, Ministry of Science and Technology, Baghdad, Iraq;

    Laser and Electro-Optic Centre, Directorate of Material Research, Ministry of Science and Technology, Baghdad, Iraq;

    Laser and Electro-Optic Centre, Directorate of Material Research, Ministry of Science and Technology, Baghdad, Iraq;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Etching time; Current densities; Porous silicon; Energy band gap;

    机译：蚀刻时间;电流密度;多孔硅能带隙;

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