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Advanced materials for 193 nm immersion lithography

机译：用于193 nm浸没式光刻的先进材料

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Recently 193 nm immersion lithography is considered the most promising next generation technology which will enable a 45 nm and below node device to be manufactured. This will lead to not only depth of focus (DOF) enlargement, but immersion lithography enables the use of a hyper numerical aperture (NA) larger than 1.0 and achieve higher resolution capability. For 193 nm lithography, water is an ideal immersion fluid, providing suitable refractive index and transmission properties. Furthermore the higher refractive index fluid is expected to provide a potential extension of optical lithography to the 32 nm node. This paper describes the critical issues of the water immersion lithography process, such as photoresist component leaching into water, defectivity etc. Leaching materials were analyzed by liquid chromatography-mass spectrometry (LC-MS) and were found to be composed of the photoacid generator (PAG) and its decomposed chemicals. The leaching amount is in the order of 10{sup}(-12) mol/cm{sup}2 with a normal 193 nm photoresist. An other issue to be studied is the water-mark defect caused by small waters droplets left on the exposed wafer. These undesirable phenomenons could be prevented by applying a topcoat material onto the photoresist film. Material design for the topcoat material and its physical and lithographic properties are discussed in detail. Development of a high refractive index fluid is also discussed in this paper. A promising high refractive index fluid HIL-001 was developed which has a higher refractive index (n = 1.64) than water and high transparency (98%/mm) at 193 nm wavelength. Immersion exposure experiments using high refractive index fluid with and without topcoat material was carried out and 32 nm L/S imaging capability was demonstrated by using a two-beam interferometric exposure tool.
机译：最近，193 nm浸没式光刻被认为是最有前途的下一代技术，它将使45 nm及以下节点器件的制造成为可能。这不仅会导致聚焦深度（DOF）增大，而且浸没式光刻技术还可以使用大于1.0的超数值孔径（NA），并实现更高的分辨率。对于193 nm光刻，水是一种理想的浸液，具有合适的折射率和透射特性。此外，期望更高折射率的流体将光学光刻技术潜在地扩展到32 nm节点。本文介绍了水浸光刻工艺中的关键问题，例如光刻胶组分浸入水中，缺陷等。通过液相色谱-质谱（LC-MS）分析浸出材料，发现浸出材料由光致产酸剂（ PAG）及其分解的化学物质。用普通的193nm光刻胶，浸出量约为10 {sup}（-12）mol / cm {sup} 2。另一个要研究的问题是由暴露在晶圆上的小水滴引起的水印缺陷。这些不良现象可以通过在光致抗蚀剂膜上涂覆面涂层材料来防止。详细讨论了面漆材料的材料设计及其物理和光刻性能。本文还讨论了高折射率流体的开发。开发了一种有前途的高折射率流体HIL-001，该流体在水中的折射率（n = 1.64）比水高，并且在193 nm波长下具有较高的透明度（98％/ mm）。进行使用和不使用面涂层材料的高折射率流体的浸没曝光实验，并通过使用两束干涉曝光工具证明了32 nm L / S成像能力。

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