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首页> 外文期刊>Journal of nanoscience and nanotechnology >Fabrication of TiO_2 Memristive Arrays by Step and Flash Imprint Lithography
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Fabrication of TiO_2 Memristive Arrays by Step and Flash Imprint Lithography

机译：分步和快速压印光刻技术制备TiO_2忆阻阵列

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摘要

Identical patterns and characteristics of sub-100 nm TiO_2-based memristive systems on 4 inch silicon substrates were demonstrated using Step and flash imprint lithography (SFIL). SFIL is a nanoimprint lithography technique that offers the advantagess of a high aspect-ratio, reliable nanopatterns, and a transparent stamp that can be used to facilitate overlay techniques. The overlay process from the alignment system in IMPRIO 100 was appropriate for the fabrication of nanoscale crossbar arrays in this study. High-density crossbar arrays that consisted of TiO_2 resistive switching material that was sandwiched between Pt electrodes with a width of 80 nm and a half-pitch of 100 nm were in turn replicated through successive imprinting and etching processes. The use of the direct metal etching process enhanced the uniformity of the TiO_2/Pt interface. The electrical property of the crossbar arrays showed the bipolar switching behavior that resulted in the application of the nonvolatile resistive memory.
机译：使用分步和快速压印光刻技术（SFIL）演示了在4英寸硅衬底上的亚100 nm TiO_2基忆阻体系的相同图案和特性。 SFIL是一种纳米压印光刻技术，具有高长宽比，可靠的纳米图案以及可用于促进覆盖技术的透明印模的优点。在这项研究中，IMPRIO 100中的比对系统进行的覆盖工艺适用于纳米级纵横制阵列的制造。通过连续的压印和蚀刻工艺依次复制了由TiO_2电阻转换材料组成的高密度纵横制开关阵列，该材料夹在宽度为80 nm，半间距为100 nm的Pt电极之间。直接金属蚀刻工艺的使用增强了TiO_2 / Pt界面的均匀性。交叉开关阵列的电性能显示出双极性开关行为，从而导致了非易失性电阻式存储器的应用。

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