Intense violet photoluminescence at room temperature in as-deposited a-Si : H : O films

Tong S.; Gao T.; Yin H.; Chen YJ.; Bao XM.; Liu XN.

首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Intense violet photoluminescence at room temperature in as-deposited a-Si : H : O films

【24h】

Intense violet photoluminescence at room temperature in as-deposited a-Si : H : O films

机译：室温沉积的a-Si：H：O薄膜中的强烈紫色光致发光

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Three photoluminescence (PL) bands at similar to 355, similar to 415, and 740 nm were observed at room temperature in a-Si:H:O films fabricated by plasma-enhanced chemical vapor deposition without post-processing, The violet emission is intense and stable, and its intensity is closely related to the oxygen content in the films, which can be controlled by the applied de bias on the sample substrates during deposition. The first two PL peaks are ascribed to oxygen-related color centers, and the last one to the quantum size effect of the crystallites embedded in a-Si:H:O matrix. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 18]

机译：在室温下通过等离子增强化学气相沉积法制备的a-Si：H：O薄膜在没有后处理的情况下在室温下观察到三个类似于355，类似于415和740 nm的光致发光（PL）带，紫光发射很强它的稳定性与稳定性有关，其强度与薄膜中的氧含量密切相关，可以通过在沉积过程中在样品基材上施加的偏压来控制氧含量。前两个PL峰归因于与氧有关的色心，最后一个归因于a-Si：H：O基质中嵌入的微晶的量子尺寸效应。（C）1998 Elsevier Science B.V.保留所有权利。 [参考：18]

著录项

来源
《Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites》 |1998年第1期|共5页
作者
Tong S.; Gao T.; Yin H.; Chen YJ.; Bao XM.; Liu XN.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Violet photoluminescence; A-si : h : o; Plasma-enhanced chemical vapor deposition; Hydrogenated amorphous-silicon; Crystalline silicon; Porous silicon; Luminescence; Emission;

机译：紫光致发光;A-si：h：o;等离子增强化学气相沉积;氢化非晶硅;结晶硅;多孔硅;发光;发射;

相似文献

外文文献
中文文献
专利

1. Intense violet photoluminescence at room temperature in as-deposited a-Si : H : O films [J] . Tong S., Gao T., Yin H., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 1998,第Pta1期

机译：室温沉积的a-Si：H：O薄膜中的强烈紫色光致发光
2. Conditions giving rise to intense visible room temperature photoluminescence in SrWO4 thin films: the role of disorder [J] . Orhan E, Anicete-Santos M, Maurera MAMA, Chemical Physics: A Journal Devoted to Experimental and Theoretical Research Involving Problems of Both a Chemical and Physical Nature . 2005,第1a3期

机译：SrWO4薄膜中引起强烈可见室温光致发光的条件：无序的作用
3. Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films [J] . Sarab Preet Singh, P. Srivastava, S. Ghosh, Scripta materialia . 2010,第6期

机译：沉积非晶硅氮化物膜的相演化和光致发光
4. Intense Ultraviolet Photoluminescence Observed at Room Temperature from NiO Nano porous Thin Films Grown by the Hydrothermal Technique [C] . Sachindra Nath Sarangi, Dongyuan Zhang, Pratap Kumar Sahoo, Materials Research Society Meeting . 2013

机译：在室温下观察到由水热技术生长的Nio纳米多孔薄膜在室温下观察到的强烈紫外光致发光
5. Low energy electrodynamics of hydrogenated amorphous silicon (a-Si:H) thin films. [D] . Rahman, Rezwanur. 2013

机译：氢化非晶硅（a-Si：H）薄膜的低能电动力学。
6. Intense stable and excitation wavelength-independent photoluminescence emission in the blue-violet region from phosphorene quantum dots [O] . Shuaipeng Ge, Lisheng Zhang, Peijie Wang, -1

机译：磷量子点在蓝紫色区域产生强烈稳定且与激发波长无关的光致发光
7. a-Si nanolayer induced enhancement of the 1.53 µm photoluminescence in Er3+ doped a-Al2O3 thin films [O] . Toudert, Johann, Núñez Sánchez, Sara, Jiménez de Castro, Miguel, 2013

机译：a-Si纳米层诱导掺Er3 +的a-Al2O3薄膜中1.53 µm光致发光的增强

Intense violet photoluminescence at room temperature in as-deposited a-Si : H : O films

摘要

著录项

相似文献

相关主题

期刊订阅