Controlling the electrical property of highly transparent conducting film of Zn coated Al doped ZnO by mechano-chemical pathway of face-to-face annealing

Ghosh T.; Basak D.

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Controlling the electrical property of highly transparent conducting film of Zn coated Al doped ZnO by mechano-chemical pathway of face-to-face annealing

机译：通过面对面退火的机械化学途径控制Zn包覆Al掺杂ZnO的高透明导电膜的电性能

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We present a mechano-chemical technique to obtain highly transparent and conducting Al doped ZnO (AZO) film by annealing two Zn coated AZO films in a face-to-face condition in Ar. This transparent conducting oxide (TCO) layer shows a carrier concentration of 2.29 × 10 ~(21) cm ~(-3), mobility of 24.11 cm ~2/Vs and resistivity of ～10 ~(-4) cm for 15 nm Zn coated film. The p-Si/AZO heterojunction shows a high rectification ratio of 1.1 × 10 ~3. Under white light illumination, the forward current of the junction is enhanced by ～1 order of magnitude compared to that under dark condition implying its promising photodiode applications.

机译：我们提出了一种机械化学技术，通过在Ar中面对面地退火两个镀锌的AZO膜来获得高透明和导电的Al掺杂的ZnO（AZO）膜。该透明导电氧化物（TCO）层对15 nm Zn的载流子浓度为2.29×10〜（21）cm〜（-3），迁移率为24.11 cm〜2 / Vs，电阻率为〜10〜（-4）cm涂膜。 p-Si / AZO异质结显示出1.1×10〜3的高整流比。在白光照射下，该结的正向电流比在黑暗条件下的正向电流提高了约1个数量级，这表明其有希望的光电二极管应用。

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《Chemical Physics Letters》 |2012年第null期|共4页
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Ghosh T.; Basak D.;
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1. Controlling the electrical property of highly transparent conducting film of Zn coated Al doped ZnO by mechano-chemical pathway of face-to-face annealing [J] . Ghosh T., Basak D. Chemical Physics Letters . 2012,第Null期

机译：通过面对面退火的机械化学途径控制Zn包覆Al掺杂ZnO的高透明导电膜的电性能
2. Microwave Annealing Effects on Spin-Coated Al Doped ZnO Transparent Conducting Oxides Thin Films [J] . Kim Jinhwan, Lee Gun-Hyun, Koh Jung-Hyuk Science of advanced materials . 2016,第4期

机译：微波退火对旋涂铝掺杂ZnO透明导电氧化物薄膜的影响
3. Effect of annealing temperature and layer thickness on the opto-electrical properties of transparent conducting Zn/SnO2/Zn multilayer thin films [J] . Kim Sung Jae, Anwar M. S., Kim Eun Ji, Journal of the Korean Physical Society . 2016,第1期

机译：退火温度和层厚对透明导电Zn / SnO2 / Zn多层薄膜光电性能的影响
4. Study of transparent conducting Ga-doped ZnO films grown by reactive co-sputtering of Zn and GaAs [C] . Shravan K. Appani, Samanth V. Rayapati, D. S. Sutar, DAE Solid State Physics Symposium . 2018

机译：通过Zn和GaAs的反应副溅射生长的透明导电的透明ZnO膜
5. Development of ZnO-based thin film transistors and phosphorus-doped ZnO and (Zn, Mg)O by pulsed laser deposition. [D] . Li, Yuanjie. 2006

机译：通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和（Zn，Mg）O。
6. Effect of zinc addition and vacuum annealing time on the properties of spin-coated low-cost transparent conducting 1 at Ga–ZnO thin films [O] . Amit Kumar Srivastava, Jitendra Kumar 2013

机译：添加锌和真空退火时间对旋涂低成本1 at％Ga–ZnO薄膜透明导电薄膜性能的影响
7. The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient CuZnSnS thin-film solar cells prepared by electrodeposition method [O] . 2015

机译：掺杂剂浓度对电沉积法制备高效CuZnSnS薄膜太阳能电池用透明导电Al掺杂ZnO薄膜性能的影响

Controlling the electrical property of highly transparent conducting film of Zn coated Al doped ZnO by mechano-chemical pathway of face-to-face annealing

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