Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111)

Biermanns A.; Breuer S.; Trampert A.; Davydok A.; Geelhaar L.; Pietsch U.

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Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111)

机译：在硅上生长的Ga辅助GaAs纳米线中的应变适应（111）

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We study the mechanism of lattice parameter accommodation and the structure of GaAs nanowires (NWs) grown on Si(111) substrates using the Ga-assisted growth mode in molecular beam epitaxy. These nanowires grow preferentially in the zincblende structure, but contain inclusions of wurtzite at the base. By means of grazing incidence x-ray diffraction and high-resolution transmission electron microscopy of the NW-substrate interface, we show that the lattice mismatch between the NW and the substrate is released immediately after the beginning of NW growth through the inclusion of misfit dislocations, and no pseudomorphic growth is obtained for NW diameters down to 10nm. NWs with a diameter above 100nm exhibit a rough interface towards the substrate, preventing complete plastic relaxation. Consequently, these NWs exhibit a residual compressive strain at their bottom. In contrast, NWs with a diameter of 50nm and below are completely relaxed because the interface is smooth.

机译：我们研究了使用Ga辅助生长模式在分子束外延中在Si（111）衬底上生长的晶格参数调节机制和GaAs纳米线（NWs）的结构。这些纳米线优先以闪锌矿结构生长，但在基部包含纤锌矿夹杂物。通过掠入射的X射线衍射和NW-衬底界面的高分辨率透射电子显微镜，我们表明NW和衬底之间的晶格失配在NW生长开始后立即通过包含失配位错而被释放。，并且对于低至10nm的NW直径，无法获得假晶生长。直径大于100nm的NW表现出朝向基材的粗糙界面，从而阻止了完全的塑性松弛。因此，这些NW在其底部显示出残余压缩应变。相反，直径50nm及以下的NW完全松弛，因为界面光滑。

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《Nanotechnology》 |2012年第30期|共8页
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Biermanns A.; Breuer S.; Trampert A.; Davydok A.; Geelhaar L.; Pietsch U.;
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1. Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111) [J] . Biermanns A., Breuer S., Trampert A., Nanotechnology . 2012,第30期

机译：在硅上生长的Ga辅助GaAs纳米线中的应变适应（111）
2. Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy [J] . Bastiman Faebian, Kuepers Hanno, Somaschini Claudio, Nanotechnology . 2016,第9期

机译：通过分子束外延在Si（111）衬底上Ga辅助生长GaAs纳米线的生长图
3. Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires onSi(111) [J] . Le Thuy Thanh Giang, C. Bougerol, H. Mariette, Journal of Crystal Growth . 2013,第FEBa1期

机译：在Si（111）上控制Ga辅助GaAs纳米线MBE生长的固有极限
4. Structal and Optical Properties Algaas Nanowires Grown by Mbe on Si(111) Substrate [C] . A V Vershinin, I V Shtrom, K P Kotlyar, International School and Conference "Saint Petersburg OPEN" . 2020

机译：通过MBE在Si（111）衬底上产生的结构和光学特性Algaas纳米线
5. Bandgap Tuning of GaAs/GaAsSb(N) Core-Shell Nanowires Grown by Molecular Beam Epitaxy [D] . Kasanaboina, Pavan Kumar. 2016

机译：通过分子束外延生长的GaAs / Gaassb（N）核心壳纳米线的带隙调谐
6. Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy [O] . Anton Davydok, Steffen Breuer, Andreas Biermanns, 2012

机译：通过Au辅助分子束外延生长后的GaAs（111）纳米线和Si（111）衬底之间的晶格参数调节
7. Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111) [O] . Faebian Bastiman, Hanno Küpers, Claudio Somaschini, 2019

机译：Si（111）上的GA辅助成核核心和GaAs纳米线生长的孵育时间分析（111）
8. Bandgap Tuning of GaAs/GaAsSb Core-Shell Nanowires Grown by Molecular Beam Epitaxy. [R] . Kasanaboina, P. K., Ojha, S. K., Sami, S. U., 2015

机译：用分子束外延生长Gaas / Gaassb核壳纳米线的带隙调谐。

Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111)

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