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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Damage to porous SiCOH low-k dielectrics by O, N and F atoms at lowered temperatures
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Damage to porous SiCOH low-k dielectrics by O, N and F atoms at lowered temperatures

机译：在降温温度下通过O，N和F原子损坏多孔SICOH低k电介质

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Information on the degradation of porous organosilicate glasses (OSGs) by active radicals and atoms is of high importance for their integration as low-k dielectrics in the next generation of ultra large scale integration (ULSI) production. The films' degradation is caused by depletion of coverage of the pore surface methyl. OSG samples with differing porosities and pore sizes were treated by O, N, and F atoms at lowered temperatures (down to -45 degrees C) downstream of O-2, N-2, and SF6 inductively coupled plasma discharges, respectively. It has been shown that lowering the temperature reduces film degradation. In the case of O atoms, this reduction is insignificant, while the effect is much more noticeable for F atoms. In addition, an accumulation of F atoms forms a fluorocarbon layer during F atom treatment. The accumulated fluorine can interact with surface Si atoms, giving rise to film etching. The film degradation under O and F atoms increases with pore size and porosity, due to deeper atom penetration. In the case of N atoms, even a small temperature reduction essentially decreases OSG degradation, while -CH(3 )modification is less clear in the cases of O and F atoms. Density functional theory and ab initio molecular dynamics simulations of reaction mechanisms show that atom reactions with surface Si-CH3 groups are the initial stages of OSG degradation. Subsequent mechanisms include branched reaction pathways with the formation, modification, and destruction of different surface groups. In the cases of O and F atoms, these reactions lead to the formation of HxCO and CFx bonds. For the direct reaction of N(S-4) atoms with -CH3 groups, significant activation energy is required. Under downstream plasma conditions, -CH3 groups are destroyed in reactions with metastable particles, and first of all, with metastable atoms N(D-2), N(P-2) and molecules N-2(A(3)Sigma(+)(u)), which are also produced inside the pores in the surface recombination of nitrogen atoms.
机译：有关通过主动自由基和原子的多孔有机硅酸盐玻璃（OSG）降解的信息对于下一代超大型集成（ULSI）生产中的低k电介质是高度重要的。薄膜的劣化是由孔表面甲基的覆盖率耗尽引起的。通过O，N和F原子在O-2，N-2和SF6电感耦合等离子体放电下游的降低温度（下降至-45摄氏度）的O，N和F原子处理具有不同孔隙率和孔尺寸的OSG样品。已经表明降低温度降低了薄膜劣化。在O原子的情况下，这种减少是微不足道的，而F原子的效果更加明显。另外，在F原子处理期间，F原子的积累形成氟碳层。累积的氟可以与表面Si原子相互作用，从而产生膜蚀刻。由于更深的原子渗透，o和f原子下的膜降解随孔径和孔隙率而增加。在N个原子的情况下，即使在o和f原子的情况下，甚至小的温度降低基本上降低了OSG劣化，而-ch（3）修饰较小。密度函数理论和AB Initio的反应机制分子动力学模拟表明，与表面Si-CH3基团的原子反应是OSG降解的初始阶段。随后的机制包括具有不同表面基团的形成，修饰和破坏的支链反应途径。在O和F原子的情况下，这些反应导致HXCO和CFX键的形成。对于N（S-4）原子与-CH3基团的直接反应，需要显着的活化能量。在下游血浆条件下，-CH3基团在亚稳定颗粒的反应中被破坏，首先是亚稳原子n（d-2），n（p-2）和分子n-2（a（3）σ（+ ）（U）），其在氮原子表面重组的表面重组中的孔内。

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