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首页> 外文期刊>EPE Journal: European Power Electronics and Drives >SiC MOSFETs robustness for diode-less applications
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SiC MOSFETs robustness for diode-less applications

机译：SIC MOSFET适用于二极管应用的鲁棒性

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摘要

Silicon-Carbide (SiC) technology presents several advantages over silicon for power electronics applications, such as lower losses. However, SiC technology is not totally mature, and some reliability problems remain. This paper studies the robustness of SiC MOSFETs in the case of diode-less applications and the associated phenomena, such as gate oxide degradation. Several devices were stressed under conditions of inductive switching and inverse current conduction. These devices were periodically characterized. As a result, a threshold voltage shift was observed in the MOSFET, with a dependence on the duty cycle of the transistor. On the contrary, no significant degradation of the internal P-N junction of the transistor was observed.
机译：碳化硅（SIC）技术呈现出用于电力电子应用的硅的几个优点，例如较低的损耗。 但是，SIC技术并不完全成熟，仍然存在一些可靠性问题。 本文研究了在较少二极管的应用和相关现象的情况下SiC MOSFET的鲁棒性，例如栅氧化物降解。 在电感开关和逆电流传导的条件下压力了几种装置。 这些设备是周期性的。 结果，在MOSFET中观察到阈值电压移位，依赖于晶体管的占空比。 相反，没有观察到晶体管的内部P-N结的显着降解。

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