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首页> 外文期刊>SIAM journal on applied dynamical systems >Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts
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Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts

机译：没有异物催化剂的Si基材上的平面INASSB纳米线的受控方向生长

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摘要

We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed (110) directions on an [100]-oriented substrate, two (100) directions plus four (111) directions on an [110]-oriented substrate, and six equivalent (112) directions on an [111]-oriented substrate, which correspond to the projections of (111) family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs, experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.
机译：我们描述了在没有任何异物的不同取向的Si底物上对平坦的INASSB纳米线（NWS）的控制生长。有趣的是，平面INASSB NWS沿着[100] - 方向基板上的四个裂纹（110）方向，两个（100）方向加上了[110] - 何种基板上的四（111）方向，六个等同物（112 ）关于[111]的衬底上的方向，该基板对应于基板平面上的（111）族晶体方向的突出部。高分辨率透射电子显微镜（HRTEM）揭示了NWS，在早期生长阶段的平面外到平面增长经历了过渡，但仍然发生在{111}平面上，这在{111}平面上具有最低的表面能量所有的表面。此外，NWS表现出纯锌 - 混合晶体结构而没有任何缺陷。提出了一种增长模型来解释NWS的生长。另外，导电原子力显微镜表明，在平面的管道NWS和P型Si基板之间自然地形成电整流P-n结。此处提出的结果可以开辟了一种新的路线方式来制造高度集成的III-V纳米型。

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  • 作者

    Du Wenna; Yang Xiaoguang; Pan Huayong; Ji Xianghai; Ji Haiming; Luo Shuai; Zhang Xingwang; Wang Zhanguo; Yang Tao;

  • 作者单位

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China;

    Peking Univ Dept Elect Key Lab Phys &

    Chem Nanodevices Beijing 100871 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 动力系统理论;
  • 关键词

    Planar nanowire; InAsSb; growth direction; HRTEM; CAFM;

    机译：平面纳米线;INASSB;生长方向;HRTEM;CAFM;

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