首页> 外国专利> LOW-DIELECTRIC CONSTANT DIELECTRIC AND COPPER INTERCONNECT STRUCTURE AND INTEGRATION METHOD THEREOF

LOW-DIELECTRIC CONSTANT DIELECTRIC AND COPPER INTERCONNECT STRUCTURE AND INTEGRATION METHOD THEREOF

机译:低介电常数铜铜互连结构及其集成方法

摘要

A low-dielectric constant dielectric and a copper interconnect structure and an integration method thereof are provided. The copper interconnect is combined with an air gap to reduce capacitance. Supporting structures(401,402) are used to support copper wires(104) to keep the form of the copper wires(104) after the dielectric is removed. The advantages are implementing the full air gap structures (210,211,212) of the longer wire, avoiding short-circuit or disconnection of the copper wires(104), and reducing resistor-capacitor(RC) delay.
机译:提供了一种低介电常数电介质和铜互连结构及其集成方法。铜互连与气隙相结合以减小电容。支撑结构(401,402)用于支撑铜线(104),以在去除电介质之后保持铜线(104)的形式。优点是实现了较长导线的完整气隙结构(210,211,212),避免了铜导线(104)的短路或断开,并减少了电阻电容(RC)的延迟。

著录项

  • 公开/公告号WO2012048509A1

    专利类型

  • 公开/公告日2012-04-19

    原文格式PDF

  • 申请/专利权人 FUDAN UNIVERSITY;WANG PENGFEI;ZHANG WEI;

    申请/专利号WO2011CN00609

  • 发明设计人 WANG PENGFEI;ZHANG WEI;

    申请日2011-04-08

  • 分类号H01L23/528;

  • 国家 WO

  • 入库时间 2022-08-21 17:16:37

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