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首页> 外文会议>2012 5th Global Symposium on Millimeter Waves. >Developing the Ka-band GaN power HEMT devices
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Developing the Ka-band GaN power HEMT devices

机译：开发Ka波段GaN功率HEMT器件

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High quality Al0.3Ga0.7N/GaN/Al0.04Ga0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 μm self-aligned T-shaped gate technology, a 4.5 W/mm output power density and 28% PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Y-shaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Y-shaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3% PAE were also obtained in CW mode at 34GHz.
机译：通过金属有机化学气相沉积（MOCVD）生长了高质量的Al0.3Ga0.7N / GaN / Al0.04Ga0.96N双异质结构。开发了两种Ka带GaN HEMT器件的制造技术。使用开发的0.25μm自对准T形栅极技术，在34 GHz的连续波（CW）模式下可获得4.5 W / mm的输出功率密度和28％的PAE。为了提高GaN HEMT器件的频率性能，开发了0.15μmY形栅极技术。通过使用该技术，可以有效地抑制寄生电容。使用0.15μmY形栅极技术制造的GaN HEMT器件的fT和fmax大大提高，分别达到80GHz和110GHz。在34 GHz的CW模式下也获得了3.1 W / mm的输出功率密度和26.3％的PAE。

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